Technical and Administrative Staff

P e r s o n a l   I n f o r m a t i o n s

Rampazzo Fabiana - Technical and Administrative Staff

E-mail: fabiana.rampazzo@dei.unipd.it

Office phone: +39 049 827 7724

Timetable:

Lu-Ma 8:00-15:30 Me-Gio 8:00-17:30 Ve 8:00-14:00

Curriculum and activities:

Fabiana Rampazzo was born in Padova Italy, in 1976.She received the degree in Physics from the University of Padova in 2001 working on caracterization and reliability of M.O.S. capacitors with Silicon Carbide substrate. In 2001 she started the PhD course of study in electronics and telecomunications engineering.

Research activities or notes:

Her main research topics includes: a) Characterization of microwave devices on III-V semiconductors such as GaAs and InP, with particular aim to transient phenomena; b) Reliability studies of the long term stability of microwave devices; c) Electrical characterization of electronic devices grown on wide bandgap semiconductors (SiC and GaN).

P u b l i c a t i o n s

2008

Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives (2008) Device and Materials Reliability, IEEE Transactions on Volume 8, Issue 2, June 2008 Page(s):332 - 343 Digital Object Identifier 10.1109/TDMR.2008.923743 - Paper Authors: Meneghesso, G.; Verzellesi, G.; Danesin, F.; Rampazzo, F.; Zanon, F.; Tazzoli, A.; Meneghini, M.; Zanoni, E.;

2007

A Review of Failure Modes and Mechanisms of GaN-based HEMT’s (2007) IEDM07, Tech. Digest, IEEE International Electron Device Meeting - Washington DC ISBN:1-4244-1508-X - Int. Conf. Proceedings Authors: Zanoni E, Meneghesso G, Verzellesi G, Danesin F, Meneghini M, Rampazzo F, Tazzoli A, Zanon F

Analysis of High-Electric-Field Degradation in ALGAN/GAN HEMTs (2007) Proc. of WOCSDICE2007, 31th Workshop on Compound Semiconductor Devices and Integrated Circuits - Venezia (I) [Gaudenzio Meneghesso] ISBN:978-88-6129-088-4 - Int. Conf. Proceedings Authors: Faqir M, Chini A, Verzellesi G, Fantini F, Rampazzo F, Meneghesso G, Zanoni E, Kordos P

Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs (2007) MICROELECTRONICS RELIABILITY - Vol. 47, Pagg. 1639-1642 - Paper Authors: Faqir M, Verzellesi G, Fantini F, Danesin F, Rampazzo F, Meneghesso G, Zanoni E., Cavallini A, Castaldini A, Labat N, Dua C

Degradation of GaN HEMT at high drain voltages (2007) ISMOT-2007, 11th International Symposium on Microwave and Optical Technology - Monte Porzio Catone, Roma – ITALY - Int. Conf. Proceedings Authors: Meneghesso G, Verzellesi G, Danesin F, Meneghini M, Rampazzo F, Tazzoli A, Zanon F, Zanoni E

High Voltage Electrical Characterization of Field-Plate Gate HEMT Devices (2007) HeTech 2007, 16th European Workshop on Heterostructure Technology - Fréjus (France) - Int. Conf. Proceedings Authors: Tazzoli A, Danesin F, Ongaro C, Rampazzo F, Zanon F, Zanoni E, Meneghesso G

2006

Current collapse and high-electric-field reliability of unpassivated GaN/AlGaN/GaN HEMTs (2006) IEEE TRANSACTIONS ON ELECTRON DEVICES - Vol. 53, Pagg. 2932-2941 - Paper Authors: Meneghesso G, Rampazzo F, Kordos P, Verzellesi G, Zanoni E.

Degradation induced by 2-MeV alpha particles on AlGaN/GaN High Electron Mobility Transistors (2006) MICROELECTRONICS RELIABILITY - Vol. 46, Pagg. 1750-1753 - Paper Authors: Danesin F, Zanon F, Gerardin S, Rampazzo F, Meneghesso G, Zanoni E., Paccagnella A

Impact of 2-MeV Alpha Irradiation on AlGaN/GaN High Electron Mobility Transistors (2006) proc. of 30th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2006 - Fiskebäckskil, Sweden - Int. Conf. Proceedings Authors: F. Zanon, F. Danesin, S. Gerardin, F. Rampazzo, Meneghesso G, E. Zanoni, A. Paccagnella

Improved stability in wide-recess InP HEMTs by means of fully passivated two-step-recessed gate (2006) IEICE Electronics Express, Vol.3, No.13,310-315 - Paper Authors: T.Suemitsu, Y.K. Fukai, M.Tokumitsu, F. Rampazzo, G. Meneghesso and E.Zanoni

Physical Investigation Of High-Field Degradation Mechanisms In Gan/Algan/Gan HEMTs (2006) ROCS 2006, Reliability Of Compound Semiconductors Workshop - San Antonio (TX) ISBN:0790801132 - Int. Conf. Proceedings Authors: M. Faqir, A. Chini, G. Verzellesi, F. Fantini, F. Rampazzo, Meneghesso G, E. Zanoni, J. Bernat, P. Kordos

Study of High-Field Degradation Phenomena in GaN-capped AlGaN/GaN HEMTs (2006) Proc. of HETECH 2006, 15th European Heterostructure Technology Workshop, - Manchester, UK - Int. Conf. Proceedings Authors: M. Faqir, A. Chini, G. Verzellesi, F. Fantini, F. Rampazzo, Meneghesso G, E. Zanoni, J. Bernat, P. Kordos

2005

Evidence of Traps Creation in GaN/AlGaN/GaN HEMTs After a 3000 Hour On-state and Off-state Hot-electron Stress (2005) IEEE International Electron Device Meeting (IEDM 2005) - Int. Conf. Proceedings Authors: A. Sozza, C. Dua, E. Morvan, M. A. Diforte-Poisson, S. Delage, F. Rampazzo, A. Tazzoli, F. Danesin, G. Meneghesso, E. Zanoni, A. Curutchet, N. Malbert, N. Labat, B. Grimbert, J.-C. De Jaeger

Hot Electron stress on unpassivated GaN/AlGaN/GaN HEMTs (2005) WOCSDICE 2005, 29th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europ - Int. Conf. Proceedings Authors: F.Rampazzo, G. Meneghesso, R. Pierobon, G. Tamiazzo, E. Zanoni, P. Kordos, J. Bernat

Hot-electron stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC (2005) IEEE International Reliability Physics Symposium ISBN:0780388038 - Int. Conf. Proceedings Authors: Meneghesso G., Pierobon R., Rampazzo F., Tamiazzo G., Zanoni E., Bernat J., Kordos P., Basile A.-F., Chini A., Verzellesi G.

Influence of gate-leakage current on drain current collapse of unpassivated GaN/AlGaN/GaN high electron mobility transistors (2005) APPLIED PHYSICS LETTERS - Vol. 86, Pagg. 253511-253513 - Paper Authors: P. Kordos, J. Bernat, M. Marso, H. Lth, F. Rampazzo, G. Tamiazzo, R. Pierobon, G. Meneghesso

Traps characterization in Si-doped GaN/AlGaN/GaN HEMT on SiC by means of low frequency techniques (2005) HETECH 2005, 14th European Heterostructure Technology Workshop, - Int. Conf. Proceedings Authors: A. Sozza, C. Dua, N. Sarazin, E. Morvan, S.L. Delage, F. Rampazzo, A. Tazzoli, F. Danesin, G. Meneghesso, E. Zanoni, A. Curutchet, N. Malbert, N. Labat

2004

Analysis of hot carrier aging degradation in GaN MESFETs (2004) 5th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) - Int. Conf. Proceedings Authors: R. Pierobon, F. Rampazzo, D. Pacetta, C. Gaquiere, D. Theron, B. Boudart, G. Meneghesso, E. Zanoni

Experimental and Simulated Gate Lag Transients in Unpassivated GaN/AlGaN/GaN HEMTs (2004) HETECH 2004, 13th European Heterostructure Technology Workshop - Int. Conf. Proceedings Authors: R. Pierobon, F. Rampazzo, G. Meneghesso, E. Zanoni, J. Bernat, M. Marso, P. Kordos, A. F. Basile, G. Verzellesi

Hot carrier aging degradation phenomena in GaN based MESFETs (2004) MICROELECTRONICS RELIABILITY - Vol. 44, Pagg. 1375-1380 - Paper Authors: F. Rampazzo, R. Pierobon, D. Pacetta, C. Gaquiere, D. Theron, B. Boudart, G. Meneghesso, E. Zanoni

Reliability aspects of GaN microwave devices (2004) EuMW 2004, 34th European Microwave Week - Int. Conf. Proceedings Authors: G. Meneghesso, R. Pierobon, F. Rampazzo, A. Chini, E. Zanoni

Reliability aspects of GaN microwave devices (2004) GAAS2004 - Int. Conf. Proceedings Authors: Meneghesso G., Verzellesi G., Pierobon R., Rampazzo F., Chini A., Zanoni E.

Study of Breakdown dynamics in InAlAs/InGaAs/InP HEMTs with Gate Length scaling down to 80 nm (2004) 16th International Conference on Indium Phosphide and Related Materials - Int. Conf. Proceedings Authors: R. Pierobon, F. Rampazzo, F. Clonfero, T. De Pellegrin, M. Bertazzo, G. Meneghesso, E. Zanoni, T. Suemitsu, T. Enoki

Surface Related Drain Current Dispersion Effects in AlGaN/GaN HEMTs (2004) IEEE TRANSACTIONS ON ELECTRON DEVICES - Vol. 51, Pagg. 1554-1561 - Paper Authors: G. Meneghesso, G. Verzellesi, R. Pierobon, F. Rampazzo, A. Chini, U. K. Mishra, C. Canali, E. Zanoni

2003

Current Collapse in AlGaN/GaN HEMT’s analyzed by means of 2D device simulation (2003) 27° Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe WOCSDICE 2003, ,Furgen, Switzerland, 26-28 May 2003 - Int. Conf. Proceedings Authors: G. Meneghesso, G. Verzellesi, R. Pierobon, F. Rampazzo, A. Chini, C. Canali, E. Zanoni,

Defect diagnostics of degradation mechanisms of GaN-based LEDs after accelerated DC current ageing (2003) GADEST 2003, Gettering and Defect Engineering in Semiconductor Technology - Int. Conf. Proceedings Authors: A. Cavallini, A. Castaldini, G. Meneghesso, S. Levada, R. Pierobon, F. Rampazzo, Zanoni E., G. Scamarcio, S. Du, I. Eliashevich

Frequency transconductance and Gate-Lag dispersion in InAlAs/InGaAs/InP HEMTs (2003) 27° Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, Furgen Switzerland 26-28 May 2003 - Int. Conf. Proceedings Authors: G. Meneghesso, F. Rampazzo, G. Schenato, L. Cecchetto, R. Pierobon, Zanoni E., T.Suemitsu, T. Enoki

Instabilities and degradation in GaN-based devices (2003) INVITED Proc. of HETECH2003, 12th European Heterostructure Technology Workshop, pp.XX-XX, La Casona del Pinar, San Rafael, Segovia, SPAIN, October 12 – 15, 2003 - Int. Conf. Proceedings Authors: G. Meneghesso, G. Verzellesi, R. Pierobon, F. Rampazzo, A. Chini, E. Zanoni,

Instabilities and degradation in GaN-based devices (2003) 12th European Heterostructure Technology Workshop (HETECH2003) - Int. Conf. Proceedings Authors: G. Meneghesso, G. Verzellesi, R. Pierobon, F. Rampazzo, A. Chini, Zanoni E.

Reliability analysis of GaN-based LEDs for solid state illumination (2003) TWHM2003, Topical Workshop on Heterostructure Microelectronics, Bankoku-Shinryokan Okinawa, Japan, January 21-24, 2003 - Int. Conf. Proceedings Authors: G. Meneghesso, S. Levada, R. Pierobon, F.Rampazzo, E.Zanoni, A.Cavallini, M.Manfredi, S. Du And I.Eliashevich

Reliability analysis of GaN-Based LEDs for solid state illumination (2003) IEICE TRANSACTIONS ON FUNDAMENTALS OF ELECTRONICS, COMMUNICATIONS AND COMPUTER SCIENCES - Vol. 86-C, Pagg. 2032-2038 - Paper Authors: G. Meneghesso, S. Levada, R. Pierobon, F. Rampazzo, E. Zanoni, A. Cavallini, M. Manfredi, S. Du, I. Eliashevich

Reliability aspects of GaN microwave devices (2003) INVITED at EuMW 2003, 33th European Microwave Week, Short Course on: “Workshop on Reliability of Compound Semiconductor Devices” organized by Dr. M. Borgarino, Monaco – Germany , October 6-10, 2003. - Int. Conf. Proceedings Authors: G. Meneghesso G. Verzellesi, R. Pierobon, F. Rampazzo, A. Chini, E. Zanoni,

RF Frequency dispersion and frequency dependence of breakdown phenomena in InAlAs/InGaAs/InP HEMTs (2003) HETECH2003, 12th European Heterostructure Technology Workshop, pp.XX-XX, La Casona del Pinar, San Rafael, Segovia, SPAIN, October 12 – 15, 2003 - Int. Conf. Proceedings Authors: R. Pierobon, F. Rampazzo, G. Meneghesso, E. Zanoni, T.Suemitsu,T. Enoki,

2002

Degradation Mechanism of GaN-based LEDs after accelerated DC current aging (2002) Tech. Digest IEEE-IEDM2002, IEEE International Electron Device Meeting, pp. 103-106, San Francisco, California, December 8-11, 2002. - Int. Conf. Proceedings Authors: G.Meneghesso, S.Levada, R.Pierobon, F.Rampazzo, E.Zanoni, A.Cavallini, A.Castaldini, G.Scamarcio, S.Du ,

Experimental/Numerical Investigation on Current Collapse in AlGaN/GaN HEMT’s (2002) Tech. Digest IEEE-IEDM2002, IEEE International Electron Device Meeting, pp. 103-106, San Francisco, California, December 8-11, 2002. - Int. Conf. Proceedings Authors: G.Verzellesi, R.Pierobon, F.Rampazzo, G.Meneghesso, A.Chini, C. Canali, E.Zanoni,