LISTA
DELLE PUBBLICAZIONI
| BOOK FO STUDENTS | 1 |
| PATENTS | 2 |
| BOOK CHAPTER | 1 |
| PAPERS ON INTERNATIONAL JOURNALS WITH REVIEW | 103 |
| PAPERS ON INTERNATIONAL CONFERENCES WITH REVIEW | 184 |
BOOK FOR STUDENTS
D1
G. Meneghesso,
Esercitazioni di
Microelettronica, Libreria Progetto,
Ed. 2000, 2004 and 2007(ISBN 88-87331-49-9)
PATENTS
1)
“Lampione
Fotovoltaico e metodo di ottimizzazione del Funzionamento di un Circuito di
controllo di corrente elettrica di ricarica di una batteria di un lampione
Fotovoltaico” depositato il 01/09/06 deposito n. VI 2006A000266
2) “Transistore Ad
Effetto Di Campo Con Giunzione Metallo Semiconduttore”, depositato il 23/02/07
deposito n. MI 2007A000353
B1
E. Zanoni,
G. Meneghesso, “Impact Ionization in Compound Semiconductor Devices”,
Book Chapter in Handbook of Advanced Electronic and Photonic Materials and Devices,edited by. H. S. Nalwa, Vol. 2 – Semiconductor Devices, Chapter 2, pp. 67-131,
2001.
PAPERS ON INTERNATIONAL
JOURNALS WITH REVIEW
R1
C. Tedesco, C. Canali, A. Neviani,
G. Meneghesso, A. Paccagnella, E.
Zanoni, “Rapid degradation induced by hot electrons in AlGaAs/GaAs HEMTs",
Proc. ofInt. Symp. GaAs and related
compounds, Karuizawa 1992, Inst. Phys. Conf.
Ser. 129: Chapter 9,
pp. 791-796.
R2
G.
Meneghesso, E. De Bortoli, A. Paccagnella, E.Zanoni, C. Canali, "Recovery of
Low Temperature Electron Trapping in AlGaAs/InGaAs PM-HEMT’s Due to
Impact-Ionization",
IEEE Electron Device Letters,
Vol. 16, No.7, pp. 336-338, July 1995.
R3
G.
Meneghesso, C. Canali, P. Cova, E. De Bortoli, E.Zanoni, "Trapped Charge
Modulation: A New Cause of Instability in AlGaAs/InGaAs Pseudomorphic HEMT's",
IEEE Electron Device Letters, Vol. 17, N.5, pp.232--234, 1996.
R4
G.
Meneghesso, A. Paccagnella,Y. Haddab, C. Canali, E. Zanoni, "Evidence of
interface trap creation by hot electrons in AlGaAs/GaAs HEMT's",
Applied Phys. Lett. Vol. 69, No. 10,
pp.1411-1413, 1996.
R5
G.Meneghesso,
J.R.M. Luchies, F. Kuper, A.J. Mouthaan, "Turn-On Speed Of Grounded Gate nMOS
ESD protection Transistors”,
Microelectronics and Reliability, Vol. 36, No. 11/12, pp. 1735-1738, 1996.
Also presented at ESREF96 7th European Symposium on Reliability and Failure
Analysis, Enschede Olanda, October 8-11, 1996 and awarded with the
BEST STUDENT PAPER AWARD
R6
G.Meneghesso,
Y. Haddab, N. Perrino, C.Canali, E. Zanoni, "Drain current DLTS analysis of
recoverable and permanent degradation effects in AlGaAs/GaAs and AlGaAs/InGaAs
HEMT's”,
Microelectronics and Reliability,
Vol. 36, No. 11/12, pp. 1895-1898, 1996
R7
G.
Meneghesso, E. De Bortoli, D. Sala, E.Zanoni, "Failure Mechanisms of AlGaAs/InGaAs
Pseudomorphic HEMT's: Effects due to Hot-Electrons and Modulation of Trapped
Charge",Microelectronics
and Reliability,
Vol. 37, No. 7, pp. 1121-1129, 1997.
R8
P. Cova, R. Menozzi, F. Fantini, M. Pavesi,
G. Meneghesso, "A Study of
Hot-Electron Degradation Effects in
pseudomorphic HEMT’s",
Microel. and Reliability, v. 37, n.
7, pp. 1131-1135, 1997.
R9
G.
Meneghesso, A. Paccagnella, D. Camin, N. Fedyakin, G. Pessina, C. Canali,
"Study of Neutron Damage in GaAs MESFETs",
IEEE Trans. on Nuclear Science,Vol.
44, No. 3, pp. 840-846, June 1997
R10
G. MeneghessoB. Cogliati, G. Donzelli, D. Sala and E. Zanoni
“Development of “kink” in the output I-V characteristics of pseudomorphic HEMT’s
after hot-electron accelerated testing”
Microelectronics and Reliability,
Vol. 37, No. 11/12, pp. 1679-682, 1997
R11
P. Pavan, A. Pellesi, G. Meneghesso and E. Zanoni “Effects of ESD protections latch-up
sensitivity of CMOS 4-stripe structure”,
Microelectronics and Reliability, Vol. 37, No. 11/12, pp. 1561-1564, 1997
R12
G. Meneghesso, M. Pavesi, S. Pavesi, “Light Emission Measurements: A
Promising Tool To Identify Hot Carrier Phenomena”,
Phys. Status Sol. (a) Vol 164, pp. 837-843, December 1997.
R13
A. Neviani,
G. Meneghesso, E. Zanoni, M. Hafizi, C. Canali, “Positive Temperature
Dependence of the Electron Impact Ionization Coefficient in In0.53Ga0.47As/InP
HBT’s”, IEEE
Electron Device Letters,
Vol. 18, No. 12, pp. 619-621, December
1997
R14
G.
Meneghesso, A. Mion, Y. Haddab, M. Pavesi, M. Manfredi, C. Canali, E. Zanoni,
“Hot carriers effects in AlGaAs/InGaAs High Electron Mobility Transistors:
failure mechanisms induced by hot-carrier testing”,
Journal of Applied Physics, Vol. 82,
No. 11, pp. 5547-5554, 1 December 1997.
R15
G.
Meneghesso, C. Canali, F. Magistrali, D. Sala, M. Vanzi, E. Zanoni, “Failure
Mechanisms due to Metallurgical Interaction in Commercially Available AlGaAs/GaAs
and AlGaAs/InGaAs HEMT's”,
Microelectronics Reliability (INTRODUCTORYINVITED
PAPER),
Vol. 38, No. 4, pp. 497-506, 1998.
R16
J. Hurt, G. Meneghesso, E. Zanoni, W. C. B. Peatman, R. Tsai, and M. Shur,
“Breakdown Behavior of Low Power Pseudomorphic AlGaAs/InGaAs 2D-MESFETs”,
IEEE Trans. Electron Devices, Vol.
45, No. 8, pp.1843-1845, August 98.
R17
G.
Meneghesso, C. Crosato, F. Garat, G. Martines, A. Paccagnella and E. Zanoni
“Failure Mechanisms of Schottky gate contact degradation and deep traps creation
in AlGaAs/InGaAs PM-HEMTs
Microelectronics Reliability,
Vol. 38, No. 9, pp. 1227-1232, 1998.
R18
G. Meneghesso, E. Perin, C. Canali and E. Zanoni, “Elimination of
the kink effects in InAlAs/InGaAs InP-based HEMT’s by means of InP etch-stop
layer”,
Inst. Phys. Conf.
Ser. No. 162 Chap.1,
pp. 21-30, 1999.
R19
F. Fantini, M. Borgarino, L. Cattani, P. Cova, R.
Menozzi, G. Salviati, C. Canali, G. Meneghesso, E. Zanoni, “Reliability Issue in Compound
Semiconductor Heterojunction Devices",
Inst. Phys. Conf.
Ser. No. 162 Chapter 1,
pp. 21-30, 1999. (Also
INVITED PAPER
at 25th International Symposium on Compound Semiconductor, ISCS’98,
pp. Fr2B-1, Nara, Japan, October 12-16, 1998.)
R20
G.
Meneghesso, A. Neviani, R. Oesterholt, M. Matloubian, T. Liu, J. Brown, C.
Canali and E. Zanoni, “On-State and Off-State Breakdown in GaInAs/InP
Composite-Channel HEMTs with Variable GaInAs Channel Thickness”,IEEE
Transactions on Electron Devices, Vol. 46, No. 1, pp. 2-9, Jannuary 1999
R21
R. Gaddi, G.
Meneghesso, M. Pavesi, M. Peroni, C. Canali and E. Zanoni,
“Electroluminescence Analysis of HFET’s Breakdown”,
IEEE Electron Device Letters, Vol.
20, No. 7, pp. 372-374, July 1999
R22
P. Cova, G.
Meneghesso, G. Salviati, E.Zanoni, “Cathodoluminescence from hot-electron
stressed InP HEMTs”, Microelectronics
Reliability, Vol. 39, No. 9, pp. 1073-1078, 1999.
R23
S. Santirosi,
G. Meneghesso, E. Novarini, C.
Contiero, E. Zanoni, “HBM and TLP ESD robustness in smart-power protection
structures”, Microelectronics
Reliability, Vol. 39, No. 9, pp. 839-844, 1999.(Also
presented at ESREF’99 10th European
Symposium on Reliability and Failure Analysis, Bordeaux, France, October 5-8,
1999 and awarded with the
BEST PAPER AWARD)
R24
G. Zandler, L. Rossi, A. Di Carlo, L. Tocca, A.
Bonfiglio, M. Brunori, P. Lugli, G. Meneghesso E. Zanoni, “Monte Carlo Simulation of Impact
Ionization and Light emission in Pseudomorphic HEMT”,
Physica B, (272) pp. 558-561, 1999.
R25
G. Meneghesso, E. Zanoni, A. Gerosa, P. Pavan, W. Stadler, K. Esmark,
X. Guggenmos “Test Structures and Testing Methods for Electrostatic Discharge –
Results of PROPHECY Project”,
Microelectronics Reliability,
Vol. 39, pp. 635-646, 1999.
R26
G. Meneghesso, G. Massari, D. Buttari,
A. Bortoletto, M. Maretto and E. Zanoni “DC and
Pulsed measurements of on-state breakdown voltage”,
Microelectronics Reliability,
Vol 39, pp. 1759-1763, 1999
R27
E. Zanoni,
G. Meneghesso, A. Bortoletto, M. Maretto, G. Massari, D. Buttari “On-state
breakdown measurements in GaAs MESFETs and InP-based HEMTs”,
Inst. Phys. Conf.
Ser. No. 166 Chapter 5,
pp. 317-320, 2000.
R28
G. Meneghesso, T. Grave, M. Manfredi, M. Pavesi, C.
Canali, E. Zanoni, , “Analysis of hot carrier transport in AlGaAs/InGaAs
pseudomorphic HEMT's by means of electroluminescence”,
IEEE Transaction on Electron Devices,Vol.
47, No. 1, pp. 2-10, 2000
R29
E. Zanoni,
G. Meneghesso and R. Menozzi “Electroluminescence and other Diagnostic
Techniques for the Study of Hot Electron Effects in Compound Semiconductor
Devices” ,
Journal of Chrystal Growth,
vol. 210, pp. 331-340, 2000, (Also
INVITED PAPERat
8th International Conference on Defects-Recognition, Imaging and
Physics in SemiconductorsAbstract of DRIP-VIII, p.XII-5, Narita, Japan,
September 15-18, 1999)
R30
A. Di Carlo, L. Rossi, P. Lugli, G. Zandler,
G. Meneghesso, M. Jackson and E.
Zanoni, “Monte Carlo study of the dynamic breakdown Effects in HEMT’s”,
IEEE Electron Device Letters,
Vol. 21, No. 4, pp. 149-151, 2000.
R31
G. Meneghesso, M. Ciappa, P. Malberti, L. Sponton, G. Croce, C.
Contiero, E. Zanoni "Overstress and Electrostatic Discharge in CMOS and BCD
Integrated Circuits"
Microelectronic Reliability,
Vol. 40, pp. 1739-1746, 2000, (Also
INVITED PAPER
at ESREF’2000 11th European Symposium on Reliability and Failure Analysis,
Dresden, Germany October 2-6, 2000)
R32 G. Meneghesso,
R. Luise, D. Buttari, A. Chini, H. Yokoyama, T. Suemitsu, E. Zanoni, “Parasitic
effects and long term stability of InP-based HEMTs”,
Microelectronics Reliability,
Vol.40, pp. 1715-1720, 2000.
R33
E. Zanoni,
G. Meneghesso, A. Di Carlo, P. Lugli, L. Rossi “Factors limiting the maximum
operating voltage of microwave devices”,
Inter. Journal of High Speed Electronics and Systems, Vol. 10, No. 1, pp.
119-128, 2000
R34
G. Salviati, N. Armani, P. Cova,
G. Meneghesso, E. Zanoni,
“Correlation between hot-electron-stress-induced degradation and
cathodoluminescence in InP based HEMTs”,
Material Science and Engineering B, Vol. B26, pp. 289-293, 2001.
R35
D. Buttari, A. Chini,
G. Meneghesso, E. Zanoni, D. Sawdai,
D. Pavlidis and S.S.H. Hsu, “Measurements of the InGaAs Hole Impact Ionization
Coefficient in InAlAs/InGaAs pnp HBTs”,
IEEE Electron Device Letters, Vol. 22, No. 5, pp. 197-199, May 2001.
R36
A. Sleiman, A. Di Carlo, L. Tocca, P. Lugli, G.
Zandler G. Meneghesso, E. Zanoni, C.
Canali A. Cetronio, M. Lanzieri, M. Peroni, “Experimental and Monte Carlo
analysis of near-breakdown phenomena in GaAs-based heterostructure FETs”
Semiconductor Science and Technology,
Vol. 16, No 5, pp. 315-319, 2001.
R37
G.
Meneghesso, A. Chini, G. Verzellesi, A. Cavallini, C. Canali and E. Zanoni
“Trap Characterization in Buried-Gate N-Channel 6H-SiC JFETs”,
IEEE Electron Device Letters, Vol.22,
No.9, pp. 432-434, 2001.
R38
G. Meneghesso,
S.Podda, M.Vanzi, “Investigation on ESD-stressed GaN/InGaN-on-sapphire blue
LEDs”,
Microelectronics Reliability,
Vol. 41, pp. 1609-1614, 2001.
R39
G. Meneghesso, A.
Chini, E. Zanoni “Long Term Stability of InGaAs/AlInAs/GaAs Methamorphic HEMTs”,
Microelectronics Reliability,
Vol. 41, pp. 1579-1584, 2001.
R40
L. Sponton, L. Cerati, G. Croce, F. Chrappan,
C. Contiero, G. Meneghesso, E. Zanoni, “ESD protection structures for BCD5
smart power technologies”,
Microel. Reliability,
V. 41, pp.1683-1687, 2001.
R41
G. Verzellesi
G. Meneghesso, A. Cavallini and E.
Zanoni, “Trap Energetic and Spatial Localization in Buried-Gate 6H-SiC JFET's by
Means of Numerical Device Simulation”,
IEEE Electron Device Letters .
Vol. 22, No. 12, pp. 579-581, December 2001
R42
N. Armani, A. Chini, M. Manfredi,
G. Meneghesso, M. Pavesi, V. Grillo,
G. Salviati and E. Zanoni “ Characterization of GaN based MESFETs by comparing
Electroluminescence, Photoionization and Cathodoluminescence spectroscopy”,
Inst. Phys. Conf. Ser. No 169,
pag. 503 (2001)
R43
D. Buttari, A. Chini,
G. Meneghesso, E. Zanoni B. Moran, S.
Heikman, N.Q. Zhang, L. Shen, R. Coffie, S. P. DenBaars, and U. K. Mishra “
Systematic Characterization of
Cl2Reactive
Ion Etching for Improved Ohmics in AlGaN/GaN HEMT’s ”,
IEEE Electron Device LettersV.23,
n.2, pp. 76-78, 2002
R44
D. Buttari, A. Chini,
G. Meneghesso, E. Zanoni P. Chavarkar,
R. Coffie, N.Q. Zhang, S. Heikman, L. Shen, H. Xing, C. Zheng, and U. K. Mishra
“Systematic Characterization of Cl2 Reactive Ion Etching for Gate
Recessing in AlGaN/GaN HEMT’s”,
IEEE Electron Device Letters,
v. 23, n.3, pp.118-120, 2002.
R45
A Mazzanti, G. Verzellesi, C. Canali,
G.
Meneghesso, E. Zanoni, “Physics-based
explanation of kink dynamics in AlGaAs/GaAs HFETs”,
IEEE Electron Device Letters,
vol. 23 n. 7 , pp. 383 –385, 2002.
R46
N. Armani, M. Manfredi, M. Pavesi, V. Grillo, G.
Salviati, A. Chini, G. Meneghesso,
and E. Zanoni, “Characterization of GaN-based metal-semiconductor field-effect
transistors
by comparing Electroluminescence, Photoionization and
Cathodoluminescence Spectroscopy”,
Journal of Applied Physics,
Vol. 92, no. 5, pp. 2401-2405, 2002.
R47
Gaudenzio Meneghessoand
Enrico Zanoni, “Failure modes and mechanisms of InP-based and Metamorphic High
Electron Mobility Transistors”,
Microel. Reliability,
v. 42, pp. 685-708, 2002.
R48
L. Sponton, L. Cerati, G. Croce G. Mura, S. Podda,
M. Vanzi, G. Meneghesso, E. Zanoni,
“ESD protection structures for 20 V and 40 V power supply suitable for BCD6
smart power technology”,
Microelectronics Reliability,
Vol. 42, n. 9, pp. 1303-1306, 2002
R49
G.
Meneghesso, A. Cocco, G. Mura, S. Podda, M. Vanzi, “Backside Failure
Analysis of
GaAs ICs after ESD tests”,
Microelectronics Reliability,
Vol. 42, n. 9, pp. 1293-1298, 2002.
R50
T. Suemitsu, H. Yokoyama, T. Ishii, T. Enoki,
G.
Meneghesso, and E. Zanoni “30-nm Two-Step-Recess Gate InP-Based InAlAs/InGaAs
HEMT’s”,
IEEE Transactions on Electron Devices,
vol 49, no. 10, pp. 1694-1700, 2002.
R51
G.
Meneghesso, S. Levada, E. Zanoni, S. Podda, G. Mura, M. Vanzi, A. Cavallini,
A. Castaldini, S. Du, and I. Eliashevich “Failure modes and mechanisms of
DC-aged GaN LEDs”,
Physica Status Solidi (a),
Vol. 194, No. 2, pp. 389-392, 2002
R52
Savian, D.; Di Carlo, A.; Lugli, R.; Peroni, M.;
Cetronio, C.; Lanzieri, C.; Meneghesso, G.;
Zanoni, E.;
“Channel temperature measurement of PHEMT by means of
optical probes”,
Electronics Letters
, Vol. 39 No. 2 pp. 247 -248, 23 Jan 2003
R53
G.
Meneghesso, A. Chini,
M. Maretto, E. Zanoni “Pulsed measurements and
circuit modeling of weak and strong avalanche effects in GaAs MESFETs and
HEMTs”,
IEEE Transactions on Electron Devices,
Vol. 50, No. 2, pp. 324 -332, Feb. 2003
R54 A. Chini, R.
Coffie, G. Meneghesso, E. Zanoni, D.
Buttari, S. Heikman, S. Keller, and U. K. Mishra “A 2.1A/mm Current Density
AlGaN/GaN HEMT”,
Electronics Letters,
V.39
N. 7, pp. 625 -626, 3 2003,
R55 Verzellesi,
G.; Basile, A.; Mazzanti, A.; Canali, C.;
Meneghesso, G.; Zanoni, E.; “Impact of temperature on surface-trap-induced
gate-lag effects in GaAs heterostructure FETs”,
Electronics Letters , Vol. 39, No.
10, pp. 810 - 811, 15 May 2003
R56
G. Meneghesso, S. Levada, E. Zanoni,
G. Scanmarcio, G. Mura, S. Podda, M. Vanzi, S. Du and I. Eliashevich
"Reliability of visible GaN LEDs in plastic package", Microelectronics
Reliability, Vol. 43, pp. 1737-1742, 2003
R57
G. Meneghesso, N. Novembre, E. Zanoni,
L. Sponton, L. Cerati, G. Croce, “Optimization of ESD protection structures
suitable for BCD6 smart power technology”,
Microelectronics Reliability, Vol.
43, pp. 1588-1594, 2003
R58 A. Sleiman,
A. Di Carlo, P. Lugli, G. Meneghesso, E. Zanoni, J. L. Thobel, "Channel thickness
dependence of breakdown dynamic in InP-based lattice-matched HEMTs",
IEEE Transactions on Electron Devices,
Vol. 50, No. 10, pp. 2009 -2014,
Oct. 2003.
R59
G. Meneghesso, S. Levada, R. Pierobon,
F. Rampazzo, E. Zanoni, A. Cavallini, M. Manfredi, S. Du, and I. Eliashevich,
“Reliability analysis of GaN-Based LEDs for solid state illumination”,
IEICE Transaction on Electronics,
Vol. E86-C, No. 10, pp. 2032-2038, October 2003.
R60 G. Salviati,
F. Rossi, N. Armani, M. Pavesi, M. Manfredi,
G. Meneghesso, E. Zanoni, A. Castaldini, and A. Cavallini, “Influence of
long-term DC-aging and high power electron beam irradiation on the electrical
and optical properties of InGaN LEDs”,
European Physical Journal - Applied Physics vol. 23 no. 1-3, pp. 345-348,
2004
R61 M. Pavesi, M.
Manfredi, G. Salviati, N. Armani, F. Rossi,
G. Meneghesso, S. Levada, E. Zanoni,
S. Du and I. Eliashevich, “Optical evidence of an electrothermal degradation of
InGaN-based light-emitting diodes during electrical stress”,
Applied Physics Letters, Vol. 84, N.
17, 2004
R62
G. Meneghesso, G. Verzellesi, R.
Pierobon, F. Rampazzo, A. Chini, U. K. Mishra, C. Canali, E. Zanoni, ‘Surface
Related Drain Current Dispersion Effects in AlGaN/GaN HEMTs’,
IEEE Trans. on Electron Devices, Vol.
51, No. 10, pp. 1554-1561, October 2004.
R63 F. Rampazzo,
R. Pierobon, D. Pacetta, C. Gaquiere, D. Theron, B. Boudart,
G. Meneghesso, E. Zanoni, ‘Hot
carrier aging degradation phenomena in GaN based MESFETs’,
Microelectronics Reliability,
Vol. 44, pp. 1375-1380, 2004
R64 C. Corvasce,
M. Ciappa, D. Barlini, S.Sponton, G.
Meneghesso, W. Fichtner, ‘Experimental investigation of self-heating effects
in semiconductor resistors during TLP pulses”,
Microelectronics Reliability,
Vol. 44, pp. 1873-1878, 2004
R65 F. Rossi, N.
Armani, G. Salviati, M. Pavesi, G. Meneghesso, S. Levada, and E. Zanoni, “The role of Mg complexes
in the degradation of InGaN-based LEDs”,
Superlattices and Microstructures, Vol. 36, No. 4-6, pp. 859-868, Oct.-Dec.
2004,
R66
R. Pierobon,
G. Meneghesso, E. Zanoni, F. Roccaforte, F. La Via, V. Raineri,
‘Temperature stability of Breakdown Voltage on SiC power Schottky diodes with
different barrier heights’, Material
Science Forum, Vol.483-485, pp. 933-936, 2005
R67
J. Bernát, R. Pierobon, M. Marso, J. Flynn, G.
Brandes, G. Meneghesso, E. Zanoni, P.
Kordoš, “Low current dispersion and low bias-stress degradation of unpassivated
GaN/AlGaN/GaN/SiC HEMTs”,
Phys. Status Sol. (C)
Vol 02, No. 7, pp. 2676-2679, 2005.
R68
A. Castaldini, A. Cavallini, L. Rigutti, M.
Meneghini, S. Levada, G. Meneghesso,
E. Zanoni, V. Härle, T. Zahner, and U. Zehnder, “Short-term instabilities of
InGaN/GaN light-emitting diodes by capacitance-voltage characteristics and
junction spectroscopy",
Phys.
Status Sol. (C)
Vol 02, No. 7, pp. 2862-2865, 2005.
R69
G. Verzellesi, G.
Meneghesso, A. Chini, E. Zanoni, C. Canali, “DC-to-RF dispersion in GaAs and
GaN based Heterostructure FETs: Performance and reliability issues”,
Microelectronics Reliability,
Vol. 45, pp. 1585-1592, 2005
(also INVITED Paper at ESREF 2005).
R70
P. Kordos, J. Bernát, M. Marso, and H. Lüth, F.
Rampazzo, G. Tamiazzo, R. Pierobon, and
G. Meneghesso, “Influence of gate-leakage current on drain current collapse
of unpassivated GaN/AlGaN/GaN high electron mobility transistors”,
Applied Physics Letters Vol. 86, p.
253511, 2005.
R71
S. Bychikhin and D. Pogany, L. K. J. Vandamme,
G. Meneghesso and E. Zanoni,
“Low-frequency noise sources in as-prepared and aged GaN-based light-emitting
diodes”, Journal of Applied Physics
Vol. 97, p. 123714 1-7, 2005
R72
A. Tazzoli,
G. Meneghesso, E. Zanoni “A Novel fast and Versatile Temperature
Measurement System for LDMOS Transistors”,
Microelectronics Reliability
Vol. 45, pp. 1742-1745, 2005
R73
S. Levada, M. Meneghini,
G. Meneghesso, E. Zanoni, “Analysis
of DC current accelerated life tests of GaN LEDs using a Weibull-based
statistical model”, IEEE Transaction on
Device and Material Reliability, Vol.5, No.4, pp. 688-693, 2005.
R74
F. Rossi, M. Pavesi, M. Meneghini, G. Salviati, M.
Manfredi, G. Meneghesso, A.
Castaldini, A. Cavallini, L. Rigutti, U. Strass, U. Zehnder, and E. Zanoni,
“Influence of short-term low current dc aging on the electrical and optical
properties of InGaN blue light-emitting diodes”
Journal of Applied Physics Vol. 99, pp. 053104 1-7, 2006.
R75
A. Cester, S. Gerardin, A. Tazzoli,
G. Meneghesso, “Electrostatic
Discharge Effects in Ultrathin Gate Oxide MOSFETs”,IEEE
Transaction on Device and Material Reliability, V.6, No.1, pp.87-94, 2006
R76
F Rossi, G Salviati, M Pavesi, M Manfredi, M
Meneghini, G Meneghesso, E Zanoni and
Uwe Strauss, “Temperature and current dependence of the optical intensity and
energy shift in blue InGaN-based light-emitting diodes: comparison between
electroluminescence and cathodoluminescence”,
Semiconducror
Science and Technology
vol.
21 pp. 638–642, 2006.
R77
T. Suemitsu, Y. K Fukay, M. Tokumitsu, F. Rampazzo,
G. Meneghesso, E. Zanoni, “Improved
Stability in Wide-recess InP HEMTs by means of a fully passivated
two-step-recess gate”, IEICE Electronics
Express, Vol. 3, No. 13, 2006
R78
F. Zanon, F. Danesin, S. Gerardin, F. Rampazzo,
G. Meneghesso, E. Zanoni, A.
Paccagnella, “Degradation Induced by 2-MeV Alpha Particles on AlGaN/GaN High
Electron Mobility Transistors”, Microelectronics Reliability Vol. 46 pp.
1750–1753, 2006
R79
M. Meneghini, S. Podda, A. Morelli, R. Pintus, L.
Trevisanello, G. Meneghesso, M. Vanzi
,E. Zanoni,, “High brightness GaN LEDs degradation during DC and pulsed stress”,
Microelectronics Reliability Vol. 46
pp. 1720–1724, 2006
R80
M. Meneghini, L. R. Trevisanello, U. Zehnder, T.
Zahner, U. Strass, G. Meneghesso, E.
Zanoni “High-temperature degradation of GaN LEDs related to passivation”,
IEEE Transation on Electron Devices,
Vol. 53, No. 12, pp. 2981-2987, 2006
R81
G.
Meneghesso, F. Rampazzo, P. Kordos, G. Verzellesi, E. Zanoni, “Current
Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN
HEMTs, IEEE Transation on Electron
Devices, Vol. 53, No. 12, pp. 2932-2941, 2006
R82
Meneghini, L. Trevisanello, S. Levada,
G. Meneghesso, E. Zanoni, F. Rossi,
M. Pavesi, M. Manfredi, U. Zehnder, U. Strass, “High-temperature failure of GaN
LEDs related with passivation”, Superlattices and Microstructures Vol. 40, pp. 405–411, 2006.
R83
A. Tazzoli, F.A. Marino, M. Cordoni, A. Benvenuti,
P. Colombo, E. Zanoni and G. Meneghesso,
“Holding voltage investigation of advanced SCR-based protection structures for
CMOS technology”, Microelectronics
Reliability, Vol. 47, No. 9-11, September-November 2007, Pages 1444-1449,
(Also presented at
ESREF’07 17th European Symposium on Reliability and
Failure Analysis,
and awarded with the
BEST PAPER AWARD)
R84
M. Meneghini, L. Trevisanello, C. Sanna, G. Mura,
M. Vanzi, G. Meneghesso and E. Zanoni,
High temperature electro-optical degradation of InGaN/GaN HBLEDs,
Microelectronics Reliability, Vol.
47, No. 9-11, September-November 2007, Pages 1625-1629
R85
M. Faqir, G. Verzellesi, F. Fantini, F. Danesin, F.
Rampazzo, G. Meneghesso, E. Zanoni,
A. Cavallini, A. Castaldini, N. Labat, A. Touboul, C. Dua, “Characterization and
analysis of trap-related effects in AlGaN–GaN HEMTs”,
Microelectronics Reliability, Vol.
47, No. 9-11, 2007, Pages 1639-1642
R86
A. Tazzoli, V. Peretti,
G. Meneghesso, “Electrostatic Discharge and Cycling effects on Ohmic
and capacitive RF-MEMS Switches”, IEEE
Transaction on Device and Material Reliability, vol. 7, no. 3, pp. 429-437,
2007
R87
M. Meneghini, L.-R. Trevisanello, U. Zehnder,
G. Meneghesso, and Enrico Zanoni,
“Reversible degradation of ohmic contacts on p-GaN for application in high
brightness LEDs”, IEEE Transaction on
Electron Devices, vol. 54, no. 12, pp. 3245 - 3251, 2007
R88
S. Gerardin, A Griffoni, A. Tazzoli, A Cester,
G. Meneghesso, A. Paccagnella,
“Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs with
Ultra-Thin Gate Oxide”, IEEE Transaction
on Nuclear Science, Vol. 54, No. 6, pp. 2204-2209, Dec. 2007,
R89
L. Trevisanello, M. Meneghini, U. Zehnder, B. Hahn,
G. Meneghesso, E. Zanoni, “High temperature instabilities of ohmic
contacts on p-GaN”, Physica
Status Solidi (c)
Vol. 5, No. 2, pp. 435–440, 2008
R90
M. Pavesi, M. Manfredi, F. Rossi, M. Meneghini,
G. Meneghesso, E. Zanoni and Ulrich
Zehnder “Implications of changes in the injection mechanisms on the low
temperature electroluminescence in InGaN/GaN light emitting diodes”,
Journal of Applied Physics
vol. 103, pp. 024503 1-5, 2008.
R91
M. Meneghini, L. Trevisanello, U. Zehnder,
G. Meneghesso, and E. Zanoni,
“Thermal degradation of InGaN/GaN LEDs ohmic contacts”, Physica
Status Solidi
(c) Vol. 5, No. 6, 2250–2253,
2008.
R92
M. Meneghini,G.
Meneghesso,N. Trivellin, E. Zanoni, K. Orita, M. Yuri, D. Ueda, "Extensive
Analysis of the
Degradation
of Blu-Ray Laser Diodes",
IEEE Electron Device Letters,
Vol.,
n. 6, pp. 578 - 581, 2008.
R93
S. Buso, G. Spiazzi, M. Meneghini,
G. Meneghesso, “Power LED Performance
Degradation of High Brightness Light Emitting Diodes under
DC and Pulsed Bias”, ,
Invited Paper:
IEEE
Trans. on Device and Material Reliabilityvol.
8, no. 12, pp. 312 - 322, 2008
R94
M. Meneghini, L. Rigutti, L.R. Trevisanello, A.
Cavallini, A. Castaldini, G. Meneghesso, E. Zanoni, “A model for the thermal degradation of
metal/(p-GaN) interface in GaN-based LEDs”,
Journal
of Applied Physics,
vol. 103, pp.
063703-1/7,
2008
R95
M. Meneghini, M. Pavesi, N. Trivellin, R. Gaska, E.
Zanoni, G. Meneghesso, “Reliability
of deep-UV Light-Emitting Diodes”, Invited
Paper:
IEEE
Trans. on Device and Material Reliability,
vol. 8, no. 12, pp. 248 - 254, 2008
R96
L.R. Trevisanello, M. Meneghini, G. Mura, M. Vanzi,
M. Pavesi, G. Meneghesso, E. Zanoni, “Accelerated Life Test of High Brightness
Light Emitting Diodes”, Invited
Paper:
IEEE
Trans. on Device and Material Reliability,
vol. 8, no. 12, pp. 304 - 311, 2008
R97
M. Meneghini, L.R. Trevisanello,
G. Meneghesso, E. Zanoni, “A review
on the reliability of GaN-based LEDs”, Invited
Paper:
IEEE
Trans. on Device and Material Reliability,
vol. 8, no. 12, pp. 323-331, 2008
R98
M. Faqir, G. Verzellesi, A. Chini, F. Fantini, F.
Danesin, G. Meneghesso, E. Zanoni, C.
Dua, “Mechanisms of RF Current Collapse in AlGaN-GaN High Electron Mobility
Transistors”, Invited
Paper:
IEEE
Trans. on Device and Material Reliability,
vol. 8, no. 12, pp. 240-247, 2008
R99
G.
Meneghesso, G. Verzellesi, F. Danesin, F. Rampazzo, F. Zanon A. Tazzoli, M.
Meneghini and E. Zanoni, “Reliability of GaN High Electron Mobility Transistors:
state of the art and perspectives”,
Invited Paper:
IEEE
Trans. on Device and Material Reliability,
vol. 8, no. 12, pp. 332-342, 2008
R100
M. Faqir, G. Verzellesi,
G. Meneghesso, E. Zanoni, and F. Fantini “Investigation of
High-Electric-Field Degradation Effects in AlGaN/GaN HEMT”,
IEEE
Transaction on Electron Devices,
vol. 55, no. 7, pp. 1592-1602, 2008
Accepted Papers, not yet published:
R101
A. Tazzoli,
G. Meneghesso, F. Zanon, F. Danesin, E. Zanoni, P. Bove, R. Langer,
J. Thorpe, “Electrical Characterization and Reliability Study of HEMTs on
Composite Substrates under High Electric Fields”,
To be published on
Microelectronics Reliability, Vol. 47, No. 9-11, 2008
R102
F. Danesin, A. Tazzoli, F. Zanon,
G. Meneghesso, E, Zanoni, A. Cetronio,
C. Lanzieri, S. Lavanga, M. Peroni, P. Romanini, “Thermal Storage Effects on
AlGaN/GaN HEMT”,
To be published on
Microelectronics Reliability, Vol. 47, No. 9-11, 2008
PAPERS ON INTERNATIONAL CONFERENCES WITH REVIEW
C1
E.Zanoni, C.Tedesco, A.Neviani,
G.Meneghesso,
"Reliability issues due to hot-electron effects
in GaAs-based MESFET's and HEMT's",
Proc. of The Electrochemical Society
Meeting, , Volume 93-2, pp. 428-429, New Orleans, Louisiana, USA, October
10-15, 1993.
C2
E.Zanoni, C.Tedesco, A.Neviani,
G.Meneghesso,
"Reliability issues due to hot-electron effects
in GaAs-based MESFET's and HEMT's", INVITED
PAPER,
H.J.Queisser, J.E. Chung, K.E. Bean, T.J. Shaffner, H. Tsuya
(editors), Proceedings of the Symposium on
“The degradation of the electronic
devices due to device operation as well as cristalline and process-induced
defects”, The Electrochemical
Society Inc. Pennington
N.J., USA, Proc. Vol. 94-1, pp. 111-124, 1994.
C3
C.Canali, E.De Bortoli,
G.Meneghesso, A.Neviani,
A.Paccagnella L.Vendrame, E.Zanoni, "Instabilities induced by DX-center and
impact-ionization hole injection in AlGaAs/InGaAs PM-HEMT's", Proc.
ofWOCSDICE ‘94,
18th European
Workshop on Compound Semiconductor Devices and Integrated Circuits, pp.34-35,
Kinsale, Ireland, May 1994.
C4
E.Zanoni, E.De Bortoli,
G.Meneghesso, A.Neviani, L.Vendrame,
A.Paccagnella C.Canali, "A new degradation mechanism induced by DX-center in
AlGaAs/InGaAs PM-HEMT's", Proc.
ofESSDERC ‘94,
24th European
Solid State Device Research Conference, pp. 539-542, Edinburgh, Scotland,
September 1994.
C5
E. Zanoni, A. Dal Fabbro, L. Vendrame, G.
Verzellesi,G. Meneghesso, P. Pavan A.
Chantre, "A physics-based, accurate spice model of impact-ionization effects in
bipolar transistors",
Proc. ofESSDERC ‘94,
24th European
Solid State Device Research Conference, pp. 181-184, Edinburgh, Scotland,
September 1994.
C6
E.Zanoni, A.Neviani,
G.Meneghesso, E.De Bortoli, L.Vendrame, and A. Rizzato,
"Hot-electron Induced effects, light emission, breakdown and reliability
problems phenomena in GaAs MESFET's AlGaAs/GaAs HEMT's and AlGaAs/InGaAS
pseudomorphic HEMT's",
INVITED PAPER,
Proc. of ESREF’94,
European Symposium on Reliability and
Failure Analysis.pp 261-272, Glasgow Scotland,
October 1994.
C7
G.
Meneghesso A. Paccagnella, E. De Bortoli, C. Morico, M. Cenedese, C. Canali,
and E.Zanoni, "Low Temperature Instabilities in AlGaAs/InGaAs Pseudomorphic
HEMT’s Induced by Trapping/Detrapping
Effects", Proc. ofEDMO‘94, 2th International
Workshop on High Performance Electron
Devices for Microwave & Optoelectronic
Applications, pp 49-54, Kings College London, England, November 1994.
C8
C. Canali, P. Cova, E. De Bortoli, F. Fantini,G.
Meneghesso, R. Menozzi, E.Zanoni, "Enhancement and degradation of drain
current in pseudomorphic AlGaAs/InGaAs HEMT's induced by hot-electrons", Proc.
of IEEE-IRPS 1995,
International Reliability Physics Symposium, pp. 205-211, Las Vegas, Nevada,
April 3-6, 1995
C9
G.
Meneghesso, Y. Haddab, E. De Bortoli, A. Paccagnella, E. Zanoni, C. Canali,
"Study of Low-Temperature Degradation of AlGaAs/InGaAs Pseudomorphic HEMT’s",
Proc. ofESSDERC ‘95,
25th European
Solid State Device Research Conference, pp. 169-172, The Hague, The Netherlands,
September 1995.
C10
D. Sala, W. Kellner, T. Grave, M. Gatti,
G. Meneghesso, L.Vendrame, G.
Camporese, B. Bortolan, E.Zanoni, "Reliability of power pseudomorphic HEMT’s
submitted to termal and hot-electrons tests", Proc.
of ESREF’95,
European Symposium on Reliability and Failure Analysis. pp 435-440, Bordeaux,
France, October 1995.
C11
P. Cova, R. Menozzi, F. Fantini, M. Pavesi,
G. Meneghesso, "A Study of
Hot-Electron Degradation Effects in
pseudomorphic HEMT’s",
Proc. of ESREF’95, European Symposium
on Reliability and Failure Analysis. pp 383-388, Bordeaux, France, October 1995.
C12
E.Zanoni, G.Meneghesso, E.De Bortoli, L.Vendrame, "Failure Mechanism of AlGaAs/InGaAs
Pseudomorphic HEMT’s”,
INVITED PAPER,
Proc. of RELECTRONIC’95, 9th Symposium on
Quality and Reliability in Electronics,pp 365-375, Budapest, Hungary, October,
1995
C13
G.
Meneghesso, E. De Bortoli, P. Cova, R. Menozzi, "On Temperature and Hot
Electron Induced Degradation in AlGaAs/InGaAs PM- HEMT’s",
Proc. of EDMO‘95 1995 Workshop on
High Performance Electron Devices for Microwave & Optoelectronic Applications,
, Kings College London, England,
November 1995, pp. 136-141.
C14
G.
Meneghesso, Y. Haddab, C. Canali, E. Zanoni, "Correlation between permanent
degradation of GaAs-based HEMT's and current DLTS spectra",
Proc. of GAASÒ96
Gallium Arsenide Application A Symposium ,
Paris CNAM,
June 5th-7th 1996,, pp 4A5.
C15
G.Meneghesso,
M. Matloubian, J.Brown, T.Liu, C. Canali, A. Mion, A. Neviani and E. Zanoni,
"Open channel impact-ionization effects in InP-based HEMT's and their dependence
on channel quantization and temperature",
54th IEEE Annual Device Research Conference Digest DRC 96, Santa
Barbara, California USA, pp. 138-139, June 24-26, 1996.
C16
G.Meneghesso,
G. Gasparetto, A. Paccagnella, D. Camin, G. Pessina, C. Canali, "Experimental
Study of Deep levels in MESFETs”, Proc. ofESSDERC ‘96, 26th European
Solid State Device Research Conference, pp. 563-566, Bologna, Italy, 9-11
September 1996.
C17
G.Meneghesso,
M. Manfredi, M. Pavesi, U. Auer, P. Ellrodt, W. Prost, J.F. Tegude, C. Canali,
E. Zanoni,"Anomalous impact-ionization gate current in high breakdown InP-based
HEMT's", Proc. ofESSDERC ‘96, 26th European
Solid State Device Research Conference, pp. 1001-1004, Bologna, Italy, 9-11
September 1996.
C18
G.Meneghesso,
A. Neviani, R. Parisotto, M. Hafizi, W.E. Stanchina, C. Canali,
E. Zanoni, "Measurement of the electron ionization
coefficient temperature dependence in InGaAs-based heterojunction bipolar
transistors", Proc. ofESSDERC ‘96, 26th European
Solid State Device Research Conference, pp. 447-450, Bologna, Italy, 9-11
September 1996.
C19
G.
Meneghesso, G. Gasparetto, A. Paccagnella, D. Camin, N.Fedyakin, G. Pessina,
C. Canali, "Neutron Induced Damage in
GaAs MESFETs", NSS'96, IEEE Nuclear
Science Symposium, Anaheim, California, November 2-9, 1996.
C20
G.Meneghesso,
J.R.M. Luchies, F. Kuper, A.J. Mouthaan, "Electron bean analysis of the turn-on
speed of grounded-gate nMOS EDS protection transistor during
Charged-Device-Model (CDM) stress pulses”,Proc.
of ISTFA'96, 22nd International
Symposium for Testing and Failure Analysis, pp. 257-262, Los Angeles California,
November 18-22 1996.
C21
G.
Meneghesso, A. Mion, A. Neviani, M. Matloubian, J. Brown, M. Hafizi, T. Liu,
C. Canali, M. Pavesi, M. Manfredi and E. Zanoni, "Effects of channel
quantization and temperature on off-state and on-state breakdown in composite
channel and conventional InP-based HEMT's",
Tech. Digest IEDM96, IEEE International Electron device meeting, pp-
43-46, San Francisco, California, December 8-11 1996.
C22
G.
Meneghesso, N.
Grapputo, P. Colombo, M. Brambilla, P. Pavan, E. Zanoni, “HBM and CDM ESD stress
test results in 0.6
mm
CMOS structures”,Proc. ofESSDERC ‘97, 27th European
Solid State Device Research Conference, pp. 704-707, Stuttgart, Germany, 22-24
September 1997.
C23
G.
Meneghesso, A. Neviani, M. Pavesi, M. Hurt, W.C.B. Peatman, M. Shur, C.
Canali, E. Zanoni, “Parasitic bipolar effects leading to on-state breakdown
in 2D-MESFET’s”,
Proc. ofESSDERC ‘97, 27th European
Solid State Device Research Conference, pp. 724-727, Stuttgart, D, 22-24
September 1997.
C24
G.
Meneghesso, G. Peloso, A. Neviani, M. Hurt, W.C.B. Peatman, M. Shur, E.
Zanoni, “Study of breakdown mechanism in 2D MESFET’s”,Proc. ofWOCSDICE ‘97, 21th European
Workshop on Compound Semiconductor Devices and Integrated Circuits, pp.21-22,
Scheveningen, NL, 25-28 May 1997.
C25
C. Lanzieri, M. Peroni, A. Cetronio, L. Costa,
G. Meneghesso, C. Canali, “Performance and reliability of GaAs based
power HFETs” Proc. of GAASÒ97
5th Gallium Arsenide Application A Symposium ,
pp. 109-112,Bologna,
September 3th-5th 1997.
C26
G.
Meneghesso, P. Colombo, M. Brambilla, R. Annunziata, P. Pavan and E. Zanoni
“Characterization of CMOS structures (0.6
mm
precess) submitted to HBM and CDM ESD stress test” ,
Proc. of ISTFA'97, 23nd Int.
Symposium for Testing and Failure Analysis, pp. 315-320, Santa Clara CA, Oct.
27-31, 1997.
C27
G.
Meneghesso, J.R.M. Luchies, F.G. Kuper, and A.J. Mouthaan, “Measurements of
the turn-on time in grounded-gate nMOS transistors under fast rise time
stresspulses”, (INVITED
PAPER) Proc. of 7th Annual RCJ Reliability
Symposium, pp. 27-32 5-7 Nov.97.
C28
G.
Meneghesso, T. Grave, M. Manfredi, M. Pavesi, C. Canali and E. Zanoni
“Electroluminescence analysis of multiplication effects in pseudomorphic HEMT’s”
22thEuropean Workshop on Compound Semiconductor Devices and
Integrated Circuits WOCSDICE 1998, pp
24-25, Zeuthen, Germany, May 24-27, 1998.
C29
G.
Meneghesso, A. di Carlo, M. Manfredi, M. Pavesi, C. Canali and E. Zanoni
“Characterization of hole transport phenomena in AlGaAs/InGaAs HEMT’s biased in
impact-ionization regime”,
56th IEEE Annual Device Research Conference,
pp. 36-37 University of Virginia,
Charlottesville, VA, June 1998.
C30
G.
Meneghesso, C. Crosato, F. Garat, G. Martines, A. Paccagnella, E. Zanoni
“DC, low Frequency and RF drift in AlGaAs/InGaAs PM-HEMTs biased in high field
and high power dissipation regime”, GAASÒ98
Conference Proceedings, Gallium Arsenide Application Symposium,
pp. 539-544, RAI Centre, Amsterdam, The Netherlands, October 5-6 1998.
C32
G.
Meneghesso, D. Buttari, E. Perin, C. Canali, E. Zanoni, “Improvement of DC,
low frequency and reliability properties of InAlAs/InGaAs InP-based HEMT’s by
means of an InP etch stop layer”
Tech. Digest IEEE-IEDM98, International Electron Device Meeting,
pp- 227-230, San Francisco, CA, December 6-9, 1998.
C33
G.
Meneghesso, A. Cavallini, A. Castaldini, G. Verzellesi, C. Canali and E.
Zanoni, “High field and low temperature behaviour of Lely-grown 6H SiC buried
gate JFETs”, WSSM1, 1st International
Workshop on Semiconducting and Superconducting Materials Turin, February
17-19, 1999
C34
A. Castaldini, Cavallini,. Canali,
G. Meneghesso and E. Zanoni, Deep
Energy Levels In 6h- Sic JFET’s”,
WSSM1, 1st Int.
Workshop on Semiconducting and Superconducting
Mat.”
Turin, Feb. 17-19, 1999
C35
R. Gaddi,R. Menozzi, A. Castaldini, C. Lanzieri,
G. Meneghesso, C. Canali and E.
Zanoni,
“Bulk and Surface Effects of Hydrogen Treatment on Al/Ti
Gate AlGaAs/GaAs Power HFETs”, Proc. of
IEEE-IRPS 1999, International Reliability Physics Symposium, pp. 110-115,
San Diego, CA, March 23-25, 1999
C36
D. Dieci, P. Cova, R. Menozzi, C. Lanzieri,
G. Meneghesso, C. Canali, E. Zanoni,
“Three-terminal off-state breakdown in AlGaAs/GaAs
power HFETs: a temperature-dependent analysis of the gate reverse current”,
Proc. ofWOCSDICE ‘99, 23th European
Workshop on Compound Semiconductor Devices and Integrated Circuits, pp.47-48,
Chantilly, France, May 26-28, 1999.
C37
E. Zanoni, G.Meneghesso, D. Buttari, M. Maretto, G. Massari, “Hot Electrons and
Reliability in HEMTs”, (INVITED
PAPER) Proc. ofWOCSDICE ‘99,
23th European Workshop on Compound Semiconductor Devices and Integrated
Circuits, pp.39-42, Chantilly, France, May 26-28, 1999.
C38
A. Sleiman, L. Rossi, A. Di Carlo, P. Lugli, G.
Zandler, G. Meneghesso E. Zanoni,
“Study of Impact Ionization and Light emission in Pseudomorphic HEMT using Monte
Carlo Simulation”,
11th III-V Semiconductor device Simulation
workshop, Lille May 10-11, 1999, Francia
C39
E. Zanoni, G. Meneghesso, A. Di Carlo, P. Lugli, L. Rossi “Factors limiting the
maximum operating voltage of microwave devices”,
In Proc. of WOFE 99,
Advanced Workshop on Frontiers in
Electronics, pp. 103-104, Villard de Lans (Grenoble), France, May 31-June 4,
1999.
C40
L. Rossi, A. Di Carlo, L. Tocca, A. Bonfiglio, M.
Brunori, P. Lugli, G. Meneghesso, E.
Zanoni, “Monte Carlo Simulation of Impact Ionization and Light Emission in
Pseudomorphic HEMT’s”
In Proc. of WOFE 99,
Advanced Workshop on Frontiers in
Electronics, pp. 103-104, Villard de Lans (Grenoble), France, May 31-June 4,
1999.
C41
A. Di Carlo, L. Rossi, P. Lugli,
G. Meneghesso, E. Zanoni, “Breakdown
Triggering in PM-HEMT studied by means of Monte Carlo simulator”Proc.
ofESSDERC ‘99, 29th European
Solid State Device Research Conference, pp. 548-551, Leuven, Belgium 13-15
September 1999.
C42
P. Cova, R. Menozzi, D. Dieci, C. Canali, M. Pavesi,
G. Meneghesso, “Off.State Breakdown
in GaAs Power HFETs”, Proc. ofESSDERC ‘99,
29th European
Solid State Device Research Conference, pp. 554-557, Leuven, Belgium 13-15
September 1999.
C43
G.
Meneghesso, E. Zanoni, “Breakdown mechanisms and hot carrier induced
degradation in GaAs and InP-based HEMTs”,
(INVITED
PAPER)
Proc. of HETECH99, 9th
European Heterostructure Technology Workshop, Lille, France, September 27-28,
1999.
C44
A. Sleiman, L. Rossi, A. Di Carlo, L. Tocca, A.
Bonfiglio, M. Brunori, P. Lugli, G. Zandler,
G. Meneghesso E. Zanoni, C. Canali,
A. Cetronio, M. Lanzieri, M. Peroni, Experimental and Theoretical studies of
near-breakdown phenomena in heterostructure FETs,
Proc. of GAASÒ99
5thGallium Arsenide Application A Symposium ,
pp. 84-87,Munich, Germany, October 4-5,1999.
C45
D. Dieci, T. Tomasi, D. Buttari,
G. Meneghesso, C. Canali, E. Zanoni,
“Temperature coefficient of on-state breakdown in InP- and GaAs-based
heterostructure FETs”, Proc. ofEDMO‘99,
1999 Symposium on High Performance Electron
Devices for Microwave & Optoelectronic
Applications, pp 93-98, Kings College London, England, November 1999.
C46
G. Meneghesso, S.
Santirosi, E. Novarini, C. Contiero, E. Zanoni,
“ESD robustness of smart-power protection
structures evaluated by means of HBM and TLP tests”,
INVITED PAPERat
IEEE-IRPS 2000,
International Reliability Physics Symposium, pp. 270-275, San Jose’,
California, April 10-13, 2000
C47
E. Zanoni, G. Meneghesso, D. Buttari, M. Maretto, G. Massari, “Pulsed
measurements and circuit modeling of a new breakdown mechanism of MESFETs and
HEMTs”,
IEEE-IRPS 2000, International Reliability Physics Symposium,
pp. 243-249, San Jose’, California, April 10-13, 2000
C48
G. Salviati, C. Zanotti-Fregonara, P.Cova,
G. Meneghesso, E. Zanoni,
“Correlation between hot-electron-stress-induced degradation and
cathodoluminescence in InP based HEMTs”,
5th
International Workshop on Expert Evaluation and Control of Compound
Semiconductor Materials and Technologies,
EXMATEC 2000, Heraklion, Crete, Greece, May 21-24 2000.
C49
G.
Meneghesso, R. Luise, A. Chini, D. Buttari, H. Yokoyama, T. Suemitsu, E.
Zanoni “Characterization and reliability of InP-based HEMTs implemented with
different process options”,
24th Workshop on Compound Semiconductor Devices and
Integrated Circuits, WOCSDICE 2000,
Agean Sea, Greece,
May 29 – June 02, 2000.
C50
D. Buttari, A. Chini,
G. Meneghesso, E. Zanoni,D. Sawdai, D.Pavlidis S.S.H. Hsu, “Hole
impact Ionization coefficient in (100) oriented In0.53Ga0.47As
based on pnp InAlAs/InGaAs HBTs”, 12th International Conference on
Indium Phosphide and Related Materials, IPRM2000
Williamsburg Marriott, Williamsburg, Virginia,
14-18 May 2000.
C51
A. Chini, G. Meneghesso, E. Zanoni, M. Manfredi, M. Pavesi, B. Boudart, C.
Gaquiere, “Deep traps related effects in GaN MESFETs grown on sapphire
substrate”,
Proc. of
HETECH2000, 10th European Heterostructure
Technology Workshop, Gunzburg, Germany,
September 17-19, 2000.
C52
G. Meneghesso and
E. Zanoni, “InP Microelectronics Reliability”,
30th European Microwave Week,
Short Course: “InP Microelectronics” organized by J. M. Dumas, Paris, France.
October 2-6, 2000.
C53
G. Meneghesso, A.
Chini, E. Zanoni, M. Manfredi, M. Pavesi, B. Boudart, C. Gaquiere, “Diagnosis of
trapping phenomena in GaN MESFETs”,
Tech. Digest
IEEE-IEDM2000, IEEE International Electron Device Meeting, pp. 389-392 San
Francisco, California, December 11-13, 2000.
C54
A. Chini, F. Bruni, D. Buttari,
G. Meneghesso, E. Zanoni, “ Current
Collapse in AlGaN/GaN HEMTs ”, 25° Workshop on Compound Semiconductor Devices
and Integrated Circuits held in Europe
WOCSDICE 2001, pp.73-74,
Cagliari, 27-30 May 2001.
C57 R. Depetro F. Mignoli A. Andreini C. Contiero, G. Meneghesso, E. Zanoni, “Experimental analysis and electro-thermal simulation of low- and high-voltage ESD protection bipolar devices in a Silicon-On-Insulator Bipolar-CMOS-DMOS technology”, 23th Electrical Overstress/Electrostatic Discharge Symposium Proc., EOS/ESD 2001, pp. 102-109, Oregon USA, September 11-13, 2001
C58 G. Meneghesso
and
E. Zanoni, “Traps related effects in SiC and GaN Based
devices”,
EuMW 2001, 31th
European Microwave Week, INVITED
PAPER AT Short Course on: “Wide Bandgap
semiconductors” organized by Prof. G. Ghione, London, England September 24-28,
2001.
C59
G. Verzellesi,
G. Meneghesso, A. Cavallini, E. Zanoni, C. Canali, “Two-Dimensional
Numerical Simulation of Deep Level Effect in 6H-SiC Buried-Gate JFETs”,
Proc. of HETECH2001, 11th
European Heterostructure Technology Workshop, pp. 55-56, Padova, Italy, October
28-30, 2001.
C61
D.Buttari, A. Chini,
G. Meneghesso, E. Zanoni, B. Moran, S. Heikman, N. Q. Zhang, L. Shen,
R. Coffie, U.K. Mishra, “Reactive Ion Etching for Improved Ohmics in AlGaN/GaN
HEMT’s”,
Proc. of
HETECH2001, 11thEuropean
Heterostructure Technology Workshop, pp.47-48, Padova, Italy, October 28-30,
2001.
C62
R. Pierobon, S. Buso, M. Citron,
G. Meneghesso, G. Spiazzi, E. Zanoni
“Characterization of Schottky SiC Diodes for Power Applications”,
Proc. of HETECH2001,
11th European Heterostructure Technology Workshop, pp.57-58, Padova,
Italy, October 28-30, 2001.
C63
A. Mazzanti, G.
Verzellesi, L. Vicini, C. Canali, A. Chini,
G. Meneghesso, E. Zanoni, C. Lanzieri
“Dependence of Impact Ionization and Kink on Surface-Deep-LevelDynamics
in AlGaAs/GaAs HFETs”,
Proc. ofEDMO2001, 2001 Symposium on
High Performance Electron
Devices for Microwave & Optoelectronic
Applications, pp 137-142, Vienna, Austria, 15-16 November 2001.
C64 N. Armani, A.
Chini, M. Manfredi, G. Meneghesso, M. Pavesi, V. Grillo, G. Salviati and E. Zanoni “
Characterization of GaN based MESFETs by comparing Electroluminescence,
Photoionization and Cathodoluminescence spectroscopy”,
Proc. of XXII Microscopy of Semiconducting Materials,
Oxford University, 25-29 March 2001;
C65 G. Verzellesi,
G. Meneghesso, A. Mazzanti, C. Canali,
E. Zanoni, “ Deep-Level Characterization in 6H-SiC JFETs by Means of
Two-Dimensional Device Simulations ”,
Proc. 13th Worshop on Physical Simulation of Semiconductor Devices,
Leeds (UK), March 2002.
C66 R. Pierobon,
S. Buso, M. Citron, G. Meneghesso, G. Spiazzi, E. Zanoni, “ Schottky SiC Diodes in Power
Switching Applications ”,
Silicon Workshop
February, 6 - 8 2002 - INFM Sede, Genova, Italy
C67 R. Pierobon,
G. Meneghesso, S. Buso, M. Citron, G.
Spiazzi, E. Zanoni, “ Schottky SiC Diodes in Power Applications
”, II WORKSHOP SiC 18-19 Marzo, 2002
CNR-MASPEC, Parma
C68
G. Meneghesso,
S. Levada, E. Zanoni, S.
Podda, G. Mura, M. Vanzi, A. Cavallini, A. Castaldini, S. Du, and I. Eliashevich
“Failure modes and mechanisms of DC-aged GaN LEDs”,
IWN 2002, Int. Workshop on Nitride Semiconductors, Aachen, Germany,
22-25 July 2002.
C69
G. Meneghesso and
E. Zanoni, “Reliability of GaN-Based Devices”,
EuMW 2002, 32th European Microwave
Week, INVITED PAPER
AT Short Course on: “Wide Bandgap semiconductors” organized by Dr. S. Delage,
Milano – Italy , September 23-27, 2002.
C70
G. Meneghesso, S. Levada, R. Pierobon,
F. Rampazzo, E. Zanoni, A. Cavallini, A. Castaldini, G. Scamarcio, S. Du, and I.
Eliashevich, “Degradation Mechanisms of GaN-Based LEDs After Accelerated DC
Current Aging”,
Tech. Digest
IEEE-IEDM2002, IEEE International Electron Device Meeting, pp. 103-106, San
Francisco, California, December 8-11, 2002.
C71 G. Verzellesi,
R. Pierobon, F. Rampazzo,
G. Meneghesso, A. Chini, D. Buttari,
U.K. Mishra, C. Canali and E. Zanoni, “Experimental/Numerical Investigation on
Current Collapse in AlGaN/GaN HEMT's”,Tech.
Digest IEEE-IEDM2002, IEEE
International Electron Device Meeting, pp. 689-692, San Francisco, California,
December 8-11, 2002.
C72
G. Meneghesso,
S. Levada, R. Pierobon, F. Rampazzo, E. Zanoni, A. Cavallini, M. Manfredi, S.
Du, and I. Eliashevich, “Reliability analysis of Gan-Based LEDs for solid state
illumination”,
TWHM 2003,
Topical Workshop on Heterostructure Microelectronics, Okinawa, Japan, January
21-24, 2003.
C73 N. Armani, F.
Rossi, G. Salviati, M. Pavesi, M. Manfredi,
G. Meneghesso, S. Levada, E. Zanoni,
S. Du, I. Eliashevich, A. Castaldini and A. Cavallini, “Luminescence properties
of GaN LEDs after DC-aging”,
7th International Workshop on "Beam Injection Assessment
of Microstructures in Semiconductors"
BIAMS, May 25-29, 2003
C74 G. Croce, A.
Andreini, L. Cerati, G. Meneghesso, L. Sponton, “ESD in SMART POWER processes”,
Advances in Analogue Circuit Design Workshop
Graz, April 16th, 2003.
C75
G. Meneghesso, G. Verzellesi, R.
Pierobon, F. Rampazzo, A. Chini, C. Canali, E. Zanoni, “Current Collapse in
AlGaN/GaN HEMT’s analyzed by means of 2D device simulation”27°
Workshop on Compound Semiconductor Devices and Integrated Circuits held in
Europe WOCSDICE 2003, Furgen,
Switzerland, 26-28 May 2003.
C76
G. Meneghesso, F. Rampazzo, G.
Schenato, L. Cecchetto, R. Pierobon, E. Zanoni, T.Suemitsu,T. Enoki, “Frequency
transconductance and Gate-Lag dispersion in InAlAs/InGaAs/InP HEMTs”,
27° Workshop on Compound Semiconductor Devices and
Integrated Circuits held in Europe
WOCSDICE 2003, ,Furgen, Switzerland, 26-28 May 2003.
C77
G. Meneghesso, E. Zanoni “Danni da
ESD sui circuiti integrati”,
V Congresso Nazionale ESD,
Padova 9 Maggio 2003.
C78
G. Meneghesso G. Verzellesi, R.
Pierobon, F. Rampazzo, A. Chini, E. Zanoni, “Reliability aspects of GaN
microwave devices” ,
INVITED
at EuMW 2003, 33th European Microwave
Week, Short Course on: “Workshop on Reliability of Compound Semiconductor
Devices” organized by Dr. M. Borgarino, Monaco – Germany , October 6-10, 2003.
C79
G. Meneghesso, G. Verzellesi, R.
Pierobon, F. Rampazzo, A. Chini, E. Zanoni, “Instabilities and degradation in
GaN-based devices”,
INVITED
Proc. of HETECH2003, 12th European Heterostructure Technology Workshop, pp.
MonD2, La Casona del Pinar, San Rafael, , SPAIN, Oct. 12–15, 2003.
C80 R. Pierobon,
F. Rampazzo, G. Meneghesso, E. Zanoni,
T.Suemitsu,T. Enoki, “RF Frequency dispersion and frequency dependence of
breakdown phenomena in InAlAs/InGaAs/InP HEMTs”,
Proc. of HETECH2003, 12th European Heterostructure Technology Workshop, pp.
MonD7, , La Casona del Pinar, San Rafael, Segovia, SPAIN, October 12 – 15, 2003.
C82 A. Castaldini,
A. Cavallini, G. Salviati, F. Rossi, N. Armani, M. Pavesi, M. Manfredi,
G. Meneghesso , S. Levada and E.
Zanoni, “Defect diagnostics of degradation mechanisms of GaN-based LEDs after
accelerated DC current ageing”, GADEST 2003, Gettering and Defect Engineering in Semiconductor
Technology, Fontaneallee, Zeuthen, Germany, 21-26 September 2003.
C84
S. Levada, G. Meneghesso, E. Zanoni,
M. Pavesi, M. Manfredi, A. Cavallini, A. Castaldini,G.
Salviati, N. Armani, F. Rossi,S. Du, I. Eliashevich
“Degradation
effects in InGaN/GaN light emitting diodes”,
The 5th International Symposium on Blue
Laser and Light Emitting Diodes, p. 173,Gyeongju, Korea, March 15-19
2004.
C85
G. Meneghesso, S. Levada, E. Zanoni,
G. Salviati, N. Armani, F. Rossi M. Pavesi, M. Manfredi, A. Cavallini, A.
Castaldini, S. Du, I. Eliashevich “Failure Mechanisms of GaN-based LEDs related
with instabilities in Doping Profile and Deep Levels”,
IEEE-IRPS 2004,International Reliability Physics
Symposium, pp. 474-478, Phoenix - Arizona, April 25-29, 2004
C86 R. Pierobon,
F. Rampazzo, L. Corradini, G. Meneghesso, E. Zanoni, J. Bernát, M. Marso and P. Kordoš, ‘Unpassivated
GaN/AlGaN/GaN HEMTs with very low DC to RF drain current dispersion’,
Proc. of WOCSDICE 2004, 28th Workshop
on Compound Semiconductor Devices and Integrated Circuits held in Europe, pp.
13-14, Bratislava, May 17-19, 2004
C87
G. Meneghesso, S. Levada, M.
Meneghini, E. Zanoni “Reliability of GaN-based LEDs”,
INVITED
Proc. of WOCSDICE 2004, 28th Workshop on
Compound Semiconductor Devices and Integrated Circuits held in Europe, p.29-32,
Bratislava, May 17-19, 2004
C88 G.
Meneghesso, E. Zanoni, “Reliability aspects of InP based HEMTs”,
INVITED LECTURE at 16th International Conference on
Indium Phosphide and Related Materials,
Kagoshima, Japan, May 31 - June 4, 2004
C89 R. Pierobon, F. Rampazzo, F. Clonfero, T. De Pellegrin, M. Bertazzo, G. Meneghesso, E. Zanoni, T. Suemitsu, T. Enoki, ‘Study of Breakdown dynamics in InAlAs/InGaAs/InP HEMTs with Gate Length scaling down to 80 nm’, 16th International Conference on Indium Phosphide and Related Materials, Kagoshima, Japan, May 31 - June 4, 2004
C90 G.
Meneghesso, M. Meneghini, S. Levada, E. Zanoni, A. Cavallini, A. Castaldini,
V. Härle, T. Zahner, U. Zehnder, “Study of short-term instabilities of InGaN/GaN
light-emitting diodes by means of capacitance-voltage measurements and deep
level transient spectroscopy”, Fourth
International Conference on Solid State Lighting, Proc. of SPIE n. 5530,
pp. 251-259., 49th Annual Meeting,Denver, Colorado 3-6 August
2004
C91 A. Sleiman,
A. Di Carlo, G. Verzellesi, G. Meneghesso, E. Zanoni “Current collapse associated with surface
states in GaN-based HEMT's. Theoretical/experimental investigations”,
SISPAD
2004, Int. Conference on Simulation of Semiconductor Processes and Devices,
Sept 2-4, 2004,Munich (D)
C92 R. Pierobon,
G. Meneghesso, E. Zanoni, F.
Roccaforte, F. La Via, V. Raineri, 'Temperature stability of Breakdown Voltage
on SiC power Schottky diodes with different barrier heights’,
5th European Conference on Silicon
Carbide and Related Materials, Bologna, Italy, August 31 - September 4, 2004
C93 R. Pierobon,
F. Rampazzo, D. Pacetta, C. Gaquiere, D. Theron, B. Boudart,
G. Meneghesso, E. Zanoni, ‘Analysis
of hot carrier aging degradation in GaN MESFETs’,
5th International Conference on Advanced
Semiconductor Devices and Microsystems, Smolenice, Slovakia, October 17–21,
2004.
C94 S. Bychikhin,
L. K. J. Vandamme, J. Kuzmik, G.Meneghesso, D. Pogany “Low frequency noise
characterization of the GaN LEDs”, 5th
International Conference on Advanced Semiconductor Devices and Microsystems,
Smolenice, Slovakia, October 17–21, 2004.
C95
R. Pierobon, F. Rampazzo,
G. Meneghesso, E. Zanoni, J. Bernát,
M. Marso, P. Kordoš, A. F. Basile, G. Verzellesi, ‘Experimental and Simulated
Gate Lag Transients in Unpassivated GaN/AlGaN/GaN HEMTs’,
Proc. of HETECH 2004, 13th European Heterostructure Technology
Workshop, Koutouloufari, Crete, Greece, October 3-6, 2004
C96
S. Levada, G. Meneghesso, G. Spiazzi, S. Buso, P. Fiorentin, D. Carraro, E.
Zanoni, ‘Characterization Of Power LEDs For General Lighting Application’,
Proc. of HETECH 2004, 13th European
Heterostructure Technology Workshop, Koutouloufari, Crete, Greece, October 3-6,
2004
C97
G.
Meneghesso G. Verzellesi, R. Pierobon, F. Rampazzo, A. Chini, E. Zanoni,
“Reliability aspects of GaN microwave devices”,
INVITED at
EuMW 2004, 34th European Microwave
Week, Short Course on: “Wide Bandgap Research for Microwave applications:
Materials, Devices and Circuit Issues” organized by Dr. S. Delage, Amsterdam ,
October 11-15, 2004.
C98 G. Meneghesso,
R. Pierobon, F. Rampazzo, G. Tamiazzo, E. Zanoni, J. Bernat, P. Kordos, A.F.
Basile , A. Chini, G. Verzellesi Hot-Electron-Stress Degradation in Unpassivated
GaN/AlGaN/GaN HEMTs on SiC, IEEE-IRPS
2005, Int. Reliability Physics Symposium, pp.415-422, San Josè, CA, April
17-21, 2005.
C99 A. Cester, S. Gerardin, A. Tazzoli, A. Paccagnella, E.
Zanoni, G. Ghidini, and G. Meneghesso,
ESD Induced Damage on Ultra-Thin Gate Oxide MOSFETs and its Impact on Device
Reliability, IEEE-IRPS 2005,
International Reliability Physics Symposium, pp.84-90, San Josè, California,
April 17-21, 2005.
C100 L. Vendrame, L. Bortesi, M. Biasio and
G. Meneghesso, “Time domain approach
for the evaluation of RC delays effects in ULSI interconnect lines”,
IEEE SPI-2005, Proc. 9th IEEE
Workshop On Signal Propagation On Interconnects, Garmisch-Partenkirchen, pp.
139-142, Germany, May 10-13, 2005.
C101 F.Rampazzo, G.
Meneghesso, R. Pierobon,G. Tamiazzo, E. Zanoni,P. Kordos, J. Bernat, “Hot
Electron stress on unpassivated GaN/AlGaN/GaN HEMTs”,
WOCSDICE 2005, 29th Workshop on
Compound Semiconductor Devices and Integrated Circuits, pp. 137-139, Cardiff -
UK, May 16-18, 2005
C102 S. Levada, D. Carraro, E. Favaro, M. Meneghini, A.
Tazzoli, S. Buso, G. Spiazzi, G.
Meneghesso, E. Zanoni, “Factors limiting the High Brightness InGaN LEDs
performance at high injection current bias”,
WOCSDICE 2005, 29th Workshop on
Compound Semiconductor Devices and Integrated Circuits, pp. 191-193, Cardiff,
UK, May 16-18, 2005
C103 G. Spiazzi, S. Buso,
G. Meneghesso, “Analysis
of a High-Power-Factor Electronic Ballast for High Brightness Light Emitting
Diodes”,
PESC 2005,
36th IEEE Power Specialist Conference, Recife, Brasil, June 12-16
2005, pp. 1494-1499.
C104 S. Bychikhin, L. K. J. Vandamme, J. Kuzmik,
G. Meneghesso, S. Levada, E. Zanoni,
D. Pogany, “Accelerated aging of GaN light emitting diodes studied by 1/f and
RTS noise”, ICNF‘2005, 18th
Int. Conference on Noise and Fluctuations, Salamanca, Spain 19-23 September
2005.
C105 R. Gaddi, A. Gnudi, A Tazzoli,
G. Meneghesso, E. Zanoni,
“Reliability of RF-MEMS”, Focussed Session on “Reliability of emergine
technologies for microwave applications” at the
EuMW2005, European Microwave Week, Paris 3-7 October 2005.
C106 A. Tazzoli, A. Gnudi, R. Gaddi, V. Peretti, E. Zanoni,
G. Meneghesso, “Resistive RF-MEMS
Switches Characterization and Reliability”,
Proc. of HETECH 2005,
14th European Heterostructure Technology Workshop,
Bratislava, October 2-5, 2005
C107 A. Sozza, C. Dua, N. Sarazin, E. Morvan, S.L. Delage,
F. Rampazzo, A. Tazzoli, F. Danesin,
G.Meneghesso, E. Zanoni, A. Curutchet, N. Malbert and N. Labat, “Traps
characterization in Si-doped GaN/AlGaN/GaN HEMT on SiC by means of low frequency
techniques”,
Proc. of HETECH 2005,
14th European Heterostructure Technology Workshop,
Bratislava, October 2-5, 2005
C108 M. Meneghini, L.-R. Trevisanello, S. Levada,
G. Meneghesso, G. Tamiazzo, E. Zanoni,
T. Zahner, U. Zehnder, V. Härle, U. Strauß, “Failure mechanisms of gallium
nitride LEDs related with passivation”,
Tech. Digest
IEEE-IEDM2005, IEEE International Electron Device Meeting, pp.1031-1034,
Washington DC, December 5-7, 2005.
C109 A. Sozza, C. Dua, E. Morvan, M. A. diForte-Poisson,
S. Delage, F. Rampazzo, A. Tazzoli, F. Danesin,
G. Meneghesso, E. Zanoni, A.
Curutchet, N. Malbert , N. Labat, B. Grimbert and J.-C. De Jaeger, “Evidence of
Traps Creation in GaN/AlGaN/GaN HEMTs After a 3000 Hour On-state and Off-state
Hot-electron Stress”,
Tech. Digest IEEE-IEDM2005, IEEE International Electron Device Meeting,
pp.601-604, Washington DC, December 5-7, 2005.
C110 A. Castaldini, A. Cavallini, L. Rigutti, M. Meneghini,
S. Levada, G. Meneghesso, E. Zanoni , V. Härle, T. Zahner, and U. Zehnder,
“Role of deep levels in DC current aging of GaN/InGaN Light-Emitting Diodes
studied by Capacitance and Photocurrent Spectroscopy”,
MRS Fall Meetings, Symposium FF:
GaN. AlN, InN and Related Materials, Boston MA, Novembre 28 – December 2, 2005,
2005,
C111 S. Levada, M. Meneghini, E. Zanoni, S. Buso, G.
Spiazzi, G. Meneghesso, G. Mura, S. Podda, M. Vanzi, "High Brightness InGaN
LEDs degradation at high injection current bias",
Proc. Of IEEE-IRPS 2006,
International Reliability Physics Symposium, pp. 615-616, San Josè, California,
March 26-30, 2006.
C112 A. Tazzoli, V. Peretti, R. Gaddi, A. Gnudi, E. Zanoni,
G. Meneghesso, “Reliability issues in RF-MEMS switches submitted to
cycling and ESD test”,
Proc. Of IEEE-IRPS 2006,
International Reliability Physics Symposium, pp. 410-415, San Josè, California,
March 26-30, 2006.
C113 M. Meneghini, L.R. Trevisanello, T. Zahner, U.
Zehnder, U. Strauss, G. Meneghesso
and E. Zanoni, “High temperature instabilities of GaN LEDs related to
passivation”, Proc. Of 30th Workshop on Compound Semiconductor Devices and
Integrated Circuits, WOCSDICE 2006,
pp. 137-139, Fiskebäckskil, Sweden, May 14-17, 2006.
C114 F. Zanon, F. Danesin, S. Gerardin, F. Rampazzo,
G. Meneghesso, E. Zanoni, and A. Paccagnella, “Impact of 2-MeV Alpha
Irradiation on AlGaN/GaN High Electron Mobility Transistors”, Proc. Of 30th
Workshop on Compound Semiconductor Devices and Integrated Circuits,
WOCSDICE 2006 pp. 153-155,
Fiskebäckskil, Sweden, May 14-17, 2006.
C115 A. Andreini, L. Cerati and
G. Meneghesso, “Review of Approaches
and Solutions for Effective ESD Protection Devices and Schemes in Smart Power
ICs”,
INVITED-
Proc. Of 3rd EOS/ESD/EMI WORKSHOP, “Immunity of electronic applications to
electrical (EOS/ESD) and electromagnetic (EMI) stresses: From system level to
chip level”, pp. 3-10, Toulouse, May 18-19, 2006.
C116
E. Orietti, N. Montemezzo, S. Buso, A. Neviani,
G. Meneghesso, G. Spiazzi, “Kuijk
Bandgap Susceptibility to RF Interferences: Measurements, Modeling and
ProvisionsMontemezzo”, Proc. Of 3rd
EOS/ESD/EMI WORKSHOP, “Immunity of electronic applications to electrical
(EOS/ESD) and electromagnetic (EMI) stresses: From system to chip level”, pp.
47-49, Toulouse, May 18-19, 2006.
C117 A. Tazzoli, L. Cerati, M. Dissegna, A. Andreini, E.
Zanoni, G. Meneghesso, “Development
of ESD protection structures for BULK and SOI BCD6 technology”,
Proc. Of IEEE-ISPSD 2006,
International Symposium on Power Semic. Dev. and ICs, pp. 361-364, Napoli, June
4-8, 2006. ISBN: 1-4244-9714-2
C118 E. Orietti, N. Montemezzo, S. Buso,
G. Meneghesso, A. Neviani and G.
Spiazzi, “On the Key Role of the Brokaw Cell on Bandgap Immunity toEMI”, Proc.
Of
CIPS 2006, 4th
International Conference on Integrated Power Electronics Systems, pp. 279-284,
June 7 to 9, Naples (I), 2006.
ISBN: 3-8007-2972-5
C119 M. Meneghini, S. Buso, G. Spiazzi, L. R. Trevisanello,
G. Meneghesso and E. Zanoni, "Stability and performance evaluation
of high-brightness light-emitting diodes under DC and pulsed bias conditions”,
Sixth International Conference on Solid
State Lighting" -
SPIE 2006 Symposium on Optics & Photonics, San
Diego, California USA, August 13-17 2006.
C120 N. Montemezzo, E. Orietti, S. Buso,
G. Meneghesso, A. Neviani and G.
Spiazzi, “Discussion of the Immunity of a Brokaw Bandgap to EMI”, Proc. Of
IEEE EMC 2006, IEEE International
Symposium on Electromagnetic Compatibility, pp. 796-801, Portland, OR, 14-18
August 2006 ISBN 1-4244-0294-8
C121 N. Montemezzo, E. Orietti, S. Buso,
G. Meneghesso, A. Neviani and G.
Spiazzi “Brokaw bandgap susceptibility to rf interferences: measurements and
analyses”, Proc. Of EMC Europe 2006,
Int. Symposium on Electromagnetic Compatibility,
pp. 900-905., Barcelona Spain, 4-8 Sept. 2006.
C122. M. Heer, S. Bychikhin, V. Dubec, D. Pogany, E.
Gornik, M. Dissegna, L. Cerati, L. Zullino, A. Andreini, A. Tazzoli,
G. Meneghesso, “Analysis of
triggering behavior of low voltage BCD single and multi-finger gc-NMOS ESD
protection devices”, Proc. Of 28th Electrical Overstress/Electrostatic Discharge
Symposium Proc., EOS/ESD 2006, pp. 275-284, Tucson, AZ, USA
Sept. 10-15, 2006
C123. A. Tazzoli, V. Peretti, E. Zanoni,
G. Meneghesso, “TLP Issues on Ohmic
and Capacitive RF-MEMS Switches”, (Premiato col
BEST Student Paper AWARD), Proc. Of 28th
Electrical Overstress/Electrostatic Discharge Symposium Proc.,
EOS/ESD 2006, pp. 295-303, Tucson, Arizona, USA
September 10-15, 2006
C124 M. Faqir, A. Chini, G. Verzellesi, F. Fantini, F.
Rampazzo, G. Meneghesso, E. Zanoni,
J. Bernat, P. Kordos, “Study of High-Field Degradation Phenomena in GaN-capped
AlGaN/GaN HEMTs”,Proc.
of HETECH 2006,
15th European Heterostructure Technology Workshop, Manchester, October 1-3, 2006
C125 A. Tazzoli, V. Peretti, D. Bozzato, E. Zanoni, G. Meneghesso,
“Characterization Issues and ESD Sensitivity of RF-MEMS Switches”, Workshop On
MEMS Reliability, 17th European Symp. Reliability of Electron Devices, Failure
Physics and Analysis, Wuppertal - Germany 3rd - 6th October 2006.
C126
G.
Meneghesso, A. Andreini, “Effective ESD protection for Mixed Power BCD
processes on Bulk and SOI substrates”,
INVITED TUTORIAL at ESREF 2006,
17th European Symposium Reliability of Electron Devices, Failure Physics and
Analysis, Wuppertal - Germany 3rd - 6th October 2006.
C127
M. Faqir, A. Chini, G. Verzellesi, F. Fantini, F.
Rampazzo, G. Meneghesso, E. Zanoni,
J. Bernat, P. Kordos, “Physical Investigation Of High-Field Degradation
Mechanisms In Gan/Algan/Gan HEMTs”, ROCS
2006, Reliability Of Compound Semiconductors Workshop, San Antonio (TX) Nov.
12, 2006
C128 G. Meneghesso,
A. Chini, E. Zanoni, “Transient Phenomena in GaAs
and
GaN Devices, including Electroluminescence and Emission
Spectroscopy, for Future THz Applications”
EuMW 2006, TUTORIAL: “WS6 (EuMIC/EUMC),
Terahertz Devices, Design, Modelling and Characterisation”European Microwave
Week 2006, Manchester, UK, 10-15 September 2006.
C129 M. Meneghini, L.-R. Trevisanello, R. Penzo, M.
Benedetti, U. Zehnder, U. Strauss, G.
Meneghesso and E. Zanoni, “Reversible degradation of GaN LEDs related to
passivation”, IEEE Proc. International Reliability Physics Symposium,
IRPS 2007, pp. 457-461, Phoenix, AZ, April 15-19, 2007, ISBN:
1-4244-0919-5
C130 M. Meneghini,
L. Trevisanello, G. Meneghesso,
and E. Zanoni, "Study of the reliability and degradation mechanisms of GaN
LEDs",
(INVITED),
Proc. of the 5th International Workshop on Industrial Technologies for
Optoelectronic Semiconductors: Reliability and Standardization of LED/Solid
State Lighting, IWITOS07, Seoul,
Corea, January 30, 2007, pp. 37-98, 2007
C131 M. Meneghini,
L. Trevisanello, G. Meneghesso,
E. Zanoni, “High temperature instabilities of GaN LEDs related to passivation”,
(INVITED),
presented at the 43rd Annual Workshop on Compound Semiconductor Materials and
Devices - WOCSEMMAD ’07, February
18-21, Savannah, Georgia, 2007
C132 M. Meneghini, L.
Trevisanello, U. Zehnder, G. Meneghesso, E. Zanoni, “High temperature instabilities of ohmic
contacts on Mg-doped gallium nitride”,
Proc. of
WOCSDICE2007, 31th
Workshop on Compound Semiconductor Devices and Integrated Circuits, (ISBN
978-88-6129-088-4), pp. 31-34, May 20-23th, 2007 Venice, Italy
C133 F. Zanon, F. Danesin, G.
Montanari, G. Meneghesso, E. Zanoni, “Investigation on charge trapping
phenomena leading to kink effect on AlGaN/GaN HEMTs”, Proc. of
WOCSDICE2007, 31th
Workshop on Compound Semiconductor Devices and Integrated Circuits, (ISBN
978-88-6129-088-4), pp. 89-92, May 20-23th, 2007 Venice, Italy
C134 M. Faqir, A. Chini, G.
Verzellesi, F. Fantini, F. Rampazzo, G. Meneghesso,E. Zanoni, P. Kordos
“Analysis of High-Electric-Field Degradation in ALGAN/GAN HEMTs”,
Proc. of
WOCSDICE2007, 31th
Workshop on Compound Semiconductor Devices and Integrated Circuits, (ISBN
978-88-6129-088-4), pp. 101-104, May 20-23th, 2007 Venice, Italy
C135
G.
Meneghesso, C. Dua, M. Peroni, M. Uren and E. Zanoni, “Parasitic effects and
reliability issues on GaN based HEMTs”
(INVITED)
proc. of
2007 International Conference on Solid State
Devices and Materials (SSDM 2007), September 18-21, 2007, Tsukuba International
Congress Center, Ibaraki, Japan, 2007, pp. 160-161.
C136 M. Dissegna, L. Cerati,
L. Cecchetto, E. Gevinti, A. Andreini, A. Tazzoli,
G. Meneghesso, “CDM circuit
simulation of a HV Operational Amplifier realized in 0.35μm Smart Power
technology”, Proc. Of 29th Electrical Overstress/Electrostatic Discharge
Symposium Proc., EOS/ESD 2007, pp.
58-67, Disneyland, Hotel Anaheim, CA, USA, September 16-21, 2007
C137 A. Tazzoli, F. Danesin,
E. Zanoni, G. Meneghesso, “ESD Robustness of AlGaN/GaN HEMT Devices”, Proc. Of
29th Electrical Overstress/Electrostatic Discharge Symposium Proc.,
EOS/ESD 2007, pp. 264-272,
Disneyland, Hotel Anaheim, CA, USA, September 16-21, 2007
C138 S. Gerardin, A. Cester, A. Tazzoli, A. Griffoni, G.
Meneghesso, A. Paccagnella, “Electrostatic discharge effects in irradiated fully
depleted SOI MOSFETS with ultra-thin gate oxide”, 2007 IEEE Nuclear and Space
Radiation Effects Conf. (NSREC2007),
July 23-27, 2007, Waikiki Beach, Honolulu, Hawaii.
C139 L.-R. Trevisanello, M.
Meneghini, G. Mura C. Sanna, S. Buso, G. Spiazzi,M. Vanzi,
G. Meneghesso, E. Zanoni, “Thermal
stability analysis of High Brightness LED during high temperature and electrical
aging”, Proceedings of the SPIE, Volume 6669, pp. 666913 (2007). Presented at
7th International Conference on Solid
State Lighting,
San Diego (CA), Aug. 2007
C140 L. Trevisanello, M.
Meneghini, U. Zehnder, B. Hahn, G. Meneghesso, E. Zanoni, "High temperature
instabilities of ohmic contacts on p-GaN",
E-MRS 2007 Spring Meeting May 28 -
June 1, 2007, Strasbourg, France
C141 Enrico Zanoni, Matteo
Meneghini, Gaudenzio Meneghesso, “Characterization, modeling and reliability of
compound semiconductor microelectronic and optoelectronic devices”, Japaneese
research, July 2007
C142 M. Meneghini, L.
Trevisanello, U. Zehnder, G. Meneghesso, and E. Zanoni, “Thermal degradation of InGaN/GaN LEDs
ohmic contacts”, 7th Int'l Conference of
Nitride Semiconductors, ICNS, 2007, Las Vegas, Nevada, USA Sept.16-21, 2007
C143 A. Tazzoli, F. Danesin,
C. Ongaro, F. Rampazzo, F. Zanon, E. Zanoni,
G. Meneghesso, “High Voltage
Electrical Characterization of Field-Plate Gate HEMT Devices”,
HeTech 2007, 16th European Workshop
on Heterostructure Technology, Fréjus, September 2-5, 2007, Tu 1.4
C144 A. Tazzoli, V. Peretti,
G. Meneghesso, “Long Term Actuation
Issues of Ohmic RF-MEMS Switches”, HeTech
2007, 16th European Workshop on Heterostructure Technology, Fréjus, Sep.
2-5, 2007, Mo 1.4
C145 A. Tazzoli, V. Peretti,
G. Meneghesso, “Characterization Issues and Charge Trapping Effects on RF-MEMS
switches”, HeTech 2007, 16th European Workshop on Heterostructure Technology,
Fréjus, September 2-5, 2007, Tu 2.5
C146 M. Faqir, G. Verzellesi,
F. Fantini, A. Cavallini, A. Castaldini, F.Danesin,
G. Meneghesso, E. Zanoni,
“Interpretation of Buffer-Trap Effects in AlGaN-GaN HEMTs”,
HeTech 2007, 16th European Workshop
on Heterostructure Technology, Fréjus, September 2-5, 2007, Tu 1.3
C147 A. Pinato, S. De Jonge,
D. Gay, K.Myny, G. Meneghesso, E. Zanoni, J. Genoe, P. Heremans, “Integration of
pentacene transistors on Parylene foil”,
HeTech 2007, 16th European Workshop on Heterostructure Technology, Fréjus,
September 2-5, 2007, Mo 2.5
C148 N. Trivellin, M.
Meneghini, L. Trevisanello, U. Zehnder,
G. Meneghesso, and E. Zanoni, “High temperature degradation of ohmic
contacts on p-GaN, HeTech 2007, 16th European Workshop on Heterostructure Technology,
Fréjus, September 2-5, 2007, Tu 1.6
C149 F. A. Marino,
G. Meneghesso, “Alternative ESD
Protection Structure in CMOS Technology for the Manufacture of High-Density
Integration Circuits”, HeTech 2007,
16th European Workshop on Heterostructure Technology, Fréjus, September 2-5,
2007, Tu 2.6
C150 A. Tazzoli, V. Peretti,
G. Cellere, G. Meneghesso, “RF-MEMS Switches Reliability for Long Term Spatial
Applications”,
6th ESA Round Table on Micro & Nano Technologies for Space Applications,
ESA/ESTEC Noordwijk, The Netherlands, 8 - 12 October 2007
C151 E. Zanoni,
G. Meneghesso, G. Verzellesi*, F.
Danesin, M. Meneghini, F. Rampazzo, A. Tazzoli, F. Zanon “A Review of Failure
Modes and Mechanisms of GaN-based HEMT’s”,
INVITED at IEDM07,
Tech. Digest, IEEE Int. Electron Device Meeting, pp. 381-384, Washington DC,
Dec. 10-12, 2007
C152
G. Meneghesso, C. Ongaro, E. Zanoni,
C. Brylinski, M. A. di Forte-Poisson, V. Hoel, J.C. de Jaeger, R. Langer, H.
Lahreche, P. Bove, J. Thorpe, “Characterisation of AlGaN/GaN HEMT epitaxy and
devices on composite substrates”, Tech.
Digest, IEEE IEDM07, IEEE International Electron Device Meeting, pp.
401-404, Washington DC, December 10-12, 2007
C153 F. A. Marino,
G. Meneghesso, “Alternative MOS
Devices for the Manufacture of High-Density ICs”,
ISDRS 2007, International
Semiconductor Device Research Symposium, University of Maryland,
Maryland, USA, December 12-14, 2007
C154
G. Meneghesso, G. Verzellesi, F.
Danesin, M. Meneghini, F. Rampazzo, A. Tazzoli, F.Zanon, E. Zanoni “Degradation
of GaN HEMT at high drain voltages”, ISMOT-2007, 11th International Symposium on Microwave and Optical
Technology pp. 181-184, Monte Porzio Catone, Roma – ITALY, December 17-21, 2007
C155 M. Meneghini,
L. Trevisanello, G. Mura, M. Vanzi, G.
Meneghesso and E. Zanoni “Study of the factors that limit the reliability of
GaN-based LEDs at high temperature levels”,
(INVITED), Proc. of the 6th International
Workshop on Industrial Technologies for Optoelectronic Semiconductors
(IWITOS08): Reliability and
Standardization of LED/Solid State Lighting, Seoul, Corea, January 29, 2008,
2008.
C156
G. Meneghesso, “Hot electrons and
High electric Fields in GaN-HEMTs and their impact on device reliability”,
(INVITED),
44th
WOCSEMMAD ’08,
The Workshop on Compound Semiconductor Materials
and Devices, Palm Springs, CA February 17-20, 2008
C157
A. Griffoni,
G. Meneghesso, and A. Paccagnella, “Ionizing Radiation Effects on
Advanced CMOS Devices and on ESD Protection Structures for CMOS Technology”,
Presented at RADFAC2008, 19th March
2008 – Mol (Belgium)
C158
G.
Meneghesso, and A. Tazzoli, “New Issues on Characterisation and Reliability
of MEMS Switches”,
(INVITED),
"Workshop on RF MEMS and MEMS based
Sensors for Security, Defence and Aerospace"
Rome, April 3 rd 2008.
C159
G. Meneghesso, A. Tazzoli, F. A.
Marino, M. Cordoni, P. Colombo, “Development of a new high holding voltage
SCR-based ESD protection structure”,
INVITED - Plenary Sessionat
IEEE International Reliability Physics Symposium,
IRPS 2008, Phoenix, AZ, pp. 3-8, April 27- May 1, 2008.ISBN:
978-1–4244–2049-0
C160 M. Meneghini,
G. Meneghesso, N. Trivellin, L.R.
Trevisanello, K. Orita, M. Yuri, E. Zanoni,Electro-thermally Activated
Degradation of Blu-Ray GaN-based Laser Diodes”,
To be presented at IEEE International
Reliability Physics Symposium, IRPS 2008, Phoenix, AZ, pp. 424-427,
April 27- May 1, 2008.
ISBN: 978-1–4244–2049-0
C161
M. Meneghini, N. Trivellin, L.R. Trevisanello, A.
Lunev, J. Yang, Y. Bilenko, W. Sun, M. Shatalov, R. Gaska, E. Zanoni,
G. Meneghesso, “Combined Optical And
Electrical Analysis of AlGaN-Based Deep-UV LEDs Reliability”,
To be presented at IEEE International
Reliability Physics Symposium, IRPS 2008,
Phoenix, AZ, pp. 441-445,
April 27- May 1, 2008.ISBN:
978-1–4244–2049-0
C162
A. Tazzoli, V. Peretti, E. Autizi, G. Meneghesso,
“Suspensions Shape Impact on the Reliability of Ohmic RF-MEMS Redundancy
Switches”, To be presented at IEEE
International Reliability Physics Symposium,
IRPS2008, pp. Phoenix, AZ, pp. 510-515, April 27-May 1, 2008.ISBN:
978-1–4244–2049-0
C163
A. Griffoni, A. Tazzoli, S. Gerardin,
G. Meneghesso, “ESD Sensitivity of
65-nm Fully Depleted SOI MOSFETs With Different Strain-Inducing Techniques”, 2nd
International Electrostatic Discharge Workshop
IEW 2008, Domaine de Pinsolle, Port D’Albret, FRANCE, pp. 162-183,
May 12-15, 2008 ISBN:
1-58537-150-5
C164
F. A. Marino,
G. Meneghesso “Alternative GGnMOS Triggered SCR ESD Protection
Structure in CMOS Technology for the Manufacture of High- Density Integration
Circuits”, 2nd International Electrostatic Discharge Workshop
IEW 2008, Domaine de Pinsolle, Port
D’Albret, FRANCE, pp. 329-338, May 12-15, 2008.
ISBN: 1-58537-150-5
C165 F. Zanon, F.
Danesin, A. Tazzoli, G. Montanari, A. Chini, J. Thorpe, C. Gaquière,
G. Meneghesso, and E. Zanoni, “High
Power Performances of GaN HEMT On SopSiC Substrate”,
To be presented at 32nd Workshop on
Compound Semiconductor Devices and Integrated Circuits,
WOCSDICE 2008,
Leuven, Belgium, pp. 33-34, May 18-21, 2008.
C166 M. Faqir, G.
Verzellesi, A. Chini, F. Fantini, F. Danesin, F. Rampazzo,
G. Meneghesso, E. Zanoni, N. Labat,
A. Touboul, C. Dua, “Effects Of Surface And Buffer Traps In Passivated Algan-GaN
HEMTs”, 32nd Workshop on Compound Semiconductor Devices and Integrated Circuits,
WOCSDICE 2008, Leuven, Belgium, pp.
111-112, May 18-21, 2008.
C167 N. Trivellin,
M. Meneghini, G. Meneghesso, L.R.
Trevisanello,
K. Orita, M. Yuri, D. Ueda, K. Yamanaka, E. Zanoni,
“Analysis of the Degradation of Blu-Ray Laser Diodes”, 32nd Workshop on Compound
Semiconductor Devices and Integrated Circuits,
WOCSDICE 2008,
Leuven, Belgium, pp. 181-182, May 18-21, 2008
C168 M-A di Forte Poisson, N
Sarazin, M. Magis, M.Tordjman, J.Di Persio, R. Langer, M.Guziewicz, L.Thoth,
B.Pecz, J.Thorpe, E. Morvan, C.Gaquière,
G. Meneghesso,“GaAlN/GaN
HEMT heterostructures grown on "SiCopSiC" composite substrates for HEMT
application”,
14th Int. Conference of Metalorganic Vapor
Phase Epitaxy,ICMOVPE XIV, Metz - June 1- 6,
2008
C169 A. Tazzoli, E. Autizi, V.
Peretti, G. Meneghesso, “Stiction Induced by Dielectric Breakdown on RF-MEMS
Switches,
Proc. of 9th. International Symposium on RF MEMS and RF icrosystems,
MEMSWAVE 2008,Heraklion June 30-July 3, 2008.
C170 A. Griffoni,
S. Gerardin, G. Meneghesso, A.
Paccagnella, E. Simoen, S. Put, C. Claeys “Microdose and breakdown effects
induced by heavy ions on sub 20-nm triple-gate SOI FETs”,
Proc. of
IEEE
Nuclear and Space Radiation Effects Conference (NSREC2008),
Tucson, Arizona, July 14-18, 2008.
C171 E. Gevinti,
L. Cerati, M. Sambi, M. Dissegna, L. Cecchetto, A. Andreini, A. Tazzoli,
G. Meneghesso,
“Novel 190V LIGBT-based ESD Protection for 0.35µm
Smart Power Technology Realized on SOI Substrate”,
To be presented at 30th Electrical Overstress/Electrostatic
Discharge Symposium Proc., EOS/ESD 2008,
Westin LaPaloma Tucson, Arizona, USA
September 7-12, 2006
C172 A. Griffoni,
A. Tazzoli, S. Gerardin, G. Meneghesso, E. Simoen, C. Claeys, “Electrostatic Discharge
Effects in Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide and Different
Strain-Inducing Techniques” To be
presented at 30th Electrical Overstress/Electrostatic Discharge Symposium
Proc., EOS/ESD 2008, Westin LaPaloma
Tucson, Arizona, USA
September 7-12, 2006
C173 A. Tazzoli,
V. Peretti, E. Autizi, G. Meneghesso, “EOS/ESD Sensitivity of Functional rf-MEMS Switches”,
Proc. Of 30th Electrical Overstress/Electrostatic Discharge Symposium
To be presented at EOS/ESD 2008,
Westin LaPaloma Tucson, Arizona, USA
September 7-12, 2006
C174
A.Griffoni, M. Silvestri, S. Gerardin,
G. Meneghesso, A. Paccagnella, B.
Kaczer, M. de Potter de ten Broeck, R. Verbeeck, and A.Nackaerts,
To be presented at 8th European Workshop
on Radiation and Its Effects on Components and Systems – RADECS 2008,
Jyväskylä, Finland, September 10th to 12th 2008.
C175 E. Zanoni,
G. Meneghesso, G. Verzellesi, F.
Danesin, M. Meneghini, F. Rampazzo, A. Tazzoli and F. Zanon, “Failure mechanisms
of GaN-based trasnsistors in on- and off-state”,
(INVITED)
To be presented at International Conference on
Solid State Devices and Materials (SSDM
2008), Tsukuba, Ibaraki, Japan, 2007,
September 23-26, 2008,
C176
G. Meneghesso, “ Reliability aspects
of GaN-HEMTs on composite substrates”,
INVITEDTo
be presented at
7th
International Conference on Advanced Semiconductor Devices and Microsystems
ASDAM '08, Smolenice, Slovakia, October 12–16, 2008.
C177
G. Meneghesso,
INVITED
Nanotechnology for Electronics, opto-Electronics and Electro-mechanical systems,
NanoE3 2008, Margaret River, Western Australia 22-24 September, 2008
C178
M. Meneghini, N. Trivellin,
G. Meneghesso, L. Trevisanello, E.
Zanoni, K. Orita, M. Yuri, D. Ueda, "Analysis of the role of current in the
degradation of InGaN-based laser diodes", to be presented at International
Workshop on Nitride semiconductors (IWN2008), Montreux, Switzerland October
6-10, 2008.
C179
G.
Meneghesso, F. Danesin, F. Rampazzo, F. Zanon, A. Tazzoli, M. Meneghini, E.
Zanoni,Light emission in GaN HEMTs: a powerful characterization and reliability
tool", to be presented at International Workshop on Nitride semiconductors
(IWN2008), Montreux, Switzerland October 6-10, 2008.
C180 F.A. Marino,
G. Meneghesso, G. Verzellesi, F.
Danesin, F. Rampazzo, F. Zanon, A. Tazzoli, E. Zanoni, "Correlation between
traps location and Dispersion effects in AlGaN/GaN HEMTs", To be presented at
17th European Heterostructure Technology Workshop, HETECH 2008, in Venice,
Italy, November 2-5, 2008.
C181 L.
Trevisanello, N. Trivellin, M. Meneghini, E. Zanoni,
G. Meneghesso, "Thermal-activated
degradation mechanism on Phosphor-Converted Light Emitting Diode", To be
presented at 17th European Heterostructure Technology Workshop, HETECH 2008, in
Venice, Italy, November 2-5, 2008.
C182 N. Wrachien,
A. Cester, A. Pinato, M. Meneghini, D. Donoval, J. Kovac, E. Zanoni,
G. Meneghesso, "Trapping effects in
Organic TFT transistors", To be presented at 17th European Heterostructure
Technology Workshop, HETECH 2008, in Venice, Italy, November 2-5, 2008.
C183 A. Pinato, M.
Meneghini, E. Zanoni, G. Meneghesso, "Reliability aspects of Organic LEDs" To be presented
at 17th European Heterostructure Technology Workshop, HETECH 2008, in Venice,
Italy, November 2-5, 2008.