Gaudenzio Meneghesso e’ stato personalmente invitato a 18 Conferenze di rilevanza  Internazionale  ed e’ inoltre coautore altri 13 interventi and Invito a conferenze internazionali.

1) “Measurements of the turn-on time in grounded-gate nMOS transistors under fast rise time stress pulses” 7th Annual RCJ Reliability Symposium, pp. 27-32 Kamata, Tokyo, 5-7 November 97.

2) “Electroluminescence and other Diagnostic Techniques for the Study of Hot Electron Effects in Compound Semiconductor Devices” DRIP-VIII, The 8th Int. Conference on Defects-Recognition, Imaging and Physics in Semiconductors, p.XII-5, Narita, Japan, September 15-18, 1999.

3) “Breakdown mechanisms and hot carrier induced degradation in GaAs and InP-based HEMTs” HETECH99, 9th European Heterostructure Technology Workshop, Lille, France, September 27-28, 1999.

4) “ESD robustness of smart-power protection structures evaluated by means of HBM and TLP tests”, IEEE Int. Reliability Physics Symposium, pp. 270-275, San Jose’, CA, April 10-13, 2000

5) "Overstress and Electrostatic Discharge in CMOS and BCD Integrated Circuits", 11th European Symp. on Reliability of Electron Dev., Failure Physics and Analysis, Dresden, D, 2-6 Oct. 2000.

6) “Traps related effects in SiC and GaN Based devices”, 31th European Microwave Week, Short Course on: “Wide Bandgap semiconductors” London, England September 24-28, 2001.

7) “Reliability of GaN-Based Devices”, 32th European Microwave Week, Short Course on: “Wide Bandgap semiconductors, Milano – Italy , September 23-27, 2002.

8) “Reliability aspects of GaN microwave devices” 33th European Microwave Week, Short Course on: “Workshop on Reliability of Compound Semic. Devices” Monaco – D , Oct. 6-10, 2003.

9)  “Instabilities and degradation in GaN-based devices”, 12th European Heterostructure Technology Workshop, La Casona del Pinar, San Rafael, Segovia, SPAIN, October 12 – 15, 2003.

10) “Reliability of GaN-based LEDs”, 28th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, p.29-32, Bratislava, May 17-19, 2004

11) “Reliability aspects of InP based HEMTs”,16th International Conference on Indium Phosphide and Related Materials, Kagoshima, Japan, May 31 - June 4, 2004

12) “Reliability aspects of GaN microwave devices” 34th European Microwave Week, Short Course on: “Wide Bandgap Research for Microwave Applications” Amsterdam , October 11-15, 2004

13) “Effective ESD protection for Mixed Power BCD processes on Bulk and SOI substrates” 17th Europ. Symp. Reliability of El. Devices, Failure Phys. and Analysis, Wuppertal - D 3-6 Oct. 2006

14) “Parasitic effects and reliability issues on GaN based HEMTs”, International Conference on Solid State Devices and Materials, September 18-21, 2007, Tsukuba, Ibaraki, Japan, 2007.

15) “Hot electrons and High electric Fields in GaN-HEMTs and their impact on device reliability”, The Workshop on Compound Semic. Materials and Devices, Palm Springs, CA Feb. 17-20, 2008

16) “New Issues on Characterisation and Reliability of MEMS Switches”, Workshop on RF MEMS and MEMS based Sensors for Security, Defence and Aerospace, Rome, April 3 rd 2008.

17) “Development of a new high holding voltage SCR-based ESD protection structure”, IEEE International Reliability Physics Symposium, IRPS 2008, Phoenix, AZ, April 27- May 1, 2008.

18) “Reliability aspects of GaN-HEMTs on composite substrates”, 7th  Int. Conf. on Advanced Semic. Devices and Microsystems ASDAM '08, Smolenice, Slovakia, October 12–16, 2008