Publications

Journals:

( 1998 - 1999 - 2000 - 2001 - 2002 - 2003 - 2004 - 2005 - 2006 - 2007 - 2008 - 2009 - 2010 - 2011 - 2012 - 2013 - 2014 - 2015 - 2016 )

Conferences:

( 1998 - 1999 - 2000 - 2001 - 2002 - 2003 - 2004 - 2005 - 2006 - 2007 - 2008 - 2009 - 2010 - 2011 - 2012 - 2013 - 2014 - 2015 - 2016 - 2017 )

 

Journals

  1. L. Torto, A. Cester, A. Rizzo, N. Wrachien, S. A. Gevorgyan, M. Corazza, F. C. Krebs,
    "Model of organic solar cell photocurrent including the effect of charge accumulation at interfaces and non-uniform carrier generation",
    IEEE Journal of the Electron Devices Society, Vol. 4, n. 6, p. 387-395, 2016,
    DOI:10.1109/JEDS.2016.2602563

  2. N. Lago, A. Cester, N. Wrachien, E. Benvenuti, S. D. Quiroga, M. Natali, S. Toffanin, M. Muccini, G. Meneghesso,
    "Investigation of Mobility Transient on Organic Transistor by Means of DLTS Technique",
    IEEE Transactions on Electron Devices, Vol. 63, n. 11, p. 4432-4439, 2015,
    DOI:10.1109/TED.2016.2611142

  3. A. Rizzo, L. Torto, N. Wrachien, M. Corazza, F. C. Krebs, S. A. Gevorgyan, A. Cester,
    "Application of Photocurrent Model on Polymer Solar Cells Under Forward Bias Stress",
    IEEE Journal of Photovoltaics, Vol. 6, n. 6, p. 1542-1548, 2016,
    DOI:10.1109/JPHOTOV.2016.2603841

  4. M. Barbato, A. Cester, and G. Meneghesso,
    "Viscoelasticity Recovery Mechanism in Radio Frequency Microelectromechanical Switches",
    IEEE Transactions on Electron Devices, Vol. 63, n.9, p. 3620-3626, 2016,
    DOI: 10.1109/TED.2016.2586600

  5. A. Rizzo, A. Cester, N. Wrachien, N. Lago, L. Torto, M. Barbato, J. Favaro, S. A. Gevorgyan, M. Corazza, F. C. Krebs,
    "Characterization and modeling of organic (P3HT:PCBM) solar cells as a function of bias and illumination",
    Solar Energy Materials and Solar Cells, Vol. 157, p. 337–345, June 2016,
    DOI: 10.1016/j.solmat.2016.06.001

  6. N. Lago, A. Cester, Nicola Wrachien, Marco Natali, S. D. Quiroga, S. Bonetti, M. Barbato, A. Rizzo, E. Benvenuti, V. Benfenati, M. Muccini, S. Toffanin, G. Meneghesso,
    "A physical-based equivalent circuit model for an organic/electrolyte interface",
    Organic Electronics, Vol. 35, p. 176–185, August 2016,
    DOI: 10.1016/j.orgel.2016.05.018

  7. M. Barbato, A. Cester, V. Mulloni, B. Margesin, and G. Meneghesso,
    "Preconditioning Procedure for the Better Estimation of the Long-Term Lifetime in Microelectromechanical Switches",
    IEEE Transactions on Electron Devices, Vol. 63, p. 1274-1280, March 2016,
    DOI: 10.1109/TED.2016.2521266

  8. M. Barbato, A. Barbato, M. Meneghini, A. Cester, G. Mura, D. Tonini, A. Voltan, G. Cellere, and G. Meneghesso,
    "Reverse bias degradation of metal wrap through silicon solar cells",
    Solar Energy Materials and Solar Cells, Vol. 147 , p.288-294, Apr. 2016,
    DOI: 10.1016/j.solmat.2015.12.029

  9. N. Lago, A. Cester, N. Wrachien, I. Tomasino, S. Toffanin, S. D. Quiroga, E. Benvenuti, M. Natali, M. Muccini, and G. Meneghesso,
    "On the Pulsed and Transient Characterization of Organic Field-Effect Transistors",
    IEEE - Electron Device Letters, Vol.36 , n.12 , p.1359-1362, Dec. 2015,
    DOI: 10.1109/LED.2015.2496336

  10. M. Barbato, A. Cester, V. Mulloni, B. Margesin, G. Meneghesso,
    "Transient Evolution of Mechanical and Electrical Effects in Microelectromechanical Switches Subjected to Long-Term Stresses",
    IEEE - Transactions on Electron Devices, Vol. 62, n. 11, p. 3825-3831, Nov. 2015,
    DOI: 10.1109/TED.2015.2479578

  11. N. Wrachien, A. Cester, N. Lago, A. Rizzo, R. D’Alpaos, A. Stefani, G. Turatti, M. Muccini, G. Meneghesso,
    "Reliability study of organic complementary logic inverters using constant voltage stress",
    Solid-State Electronics, Vol. 113, n. 11, p. 151-156, Nov. 2015,
    DOI: 10.1016/j.sse.2015.05.028

  12. A. Cester, A. Rizzo, A. Bazzega, N. Lago, J. Favaro, M. Barbato, N. Wrachien, S.A. Gevorgyan, M. Corazza, F.C. Krebs,
    "Effects of constant voltage and constant current stress in PCBM: P3HT solar cells",
    Microelectronics Reliability, Vol. 55, n.9-10, p. 1795-1799, Aug-Sept. 2015
    DOI: 10.1016/j.microrel.2015.06.082

  13. N. Wrachien, N. Lago, A. Rizzo, R. D'Alpaos, A. Stefani, G. Turatti, M. Muccini, G. Meneghesso, A. Cester,
    "Effects of thermal and electrical stress on DH4T-based organic thin-film-transistors with PMMA gate dielectrics",
    Microelectronics Reliability, Vol. 55, n.9-10, p. 1790-1794, Aug-Sept. 2015
    DOI: 10.1016/j.microrel.2015.06.073

  14. M Barbato, M Meneghini, A. Cester, G Mura, E Zanoni, G Meneghesso,
    "Influence of shunt resistance on the performance of an illuminated string of solar cells: theory, simulation and experimental analysis",
    IEEE - Transactions on Device and Materials Reliability, Vol. 14, n. 4, p. 942-950, Dec. 2014,
    DOI: 10.1109/TDMR.2014.2347138

  15. M. V. Madsen, S. A. Gevorgyan, R. Pacios, J. Ajuria, I. Etxebarria, J. Kettle, N. D. Bristow, M. Neophytou, S. A. Choulis, L. S. Roman, T.Yohannes, A. Cester, P. Cheng, X. Zhan, J. Wu, Z. Xie, W.-C. Tu, J.-H. He, C.J. Fell, K. Anderson, M. Hermenau, D. Bartesaghi, L. Jan, A. Koster, F. Machui, I. Gonzalez-Valls, M. Lira-Cantu, P. P. Khlyabich, B. C. Thompson, R. Gupta, K. Shanmugam, G. U. Kulkarni, Y. Galagan, A. Urbina, J. Abad, R. Roesch, H. Hoppe, P. Morvillo, E. Bobeico, E. Panaitescu, L. Menon, Q. Luo, Z. Wu, C. Ma, A. Hambarian, V.Melikyan, M. Hambsch, P. Burn, P. Meredith, T. Rath, S. Dunst, G. Trimmel, G. Bardizza, H. Mallejans, A. E. Goryachev, R. K. Misra, E. A. Katz, K. Takagi, S. Magaino, H. Saito, D. Aoki, J. M. Kroon, T. Vangerven, J. Manca, J. Kesters, W. Maes, O. D. Bobkova, V. A. Trukhanov, D. Y. Paraschuk, F. A. Castro, J. Blakesley, S. M. Tuladhar, J. A. Rohr, J. Nelson, J. Xia, E. A. Parlak, T. A. Tumay, H.-J. Egelhaaf, D. M. Tanenbaum, G. M. Ferguson, R. Carpenter, H. Chen, B. Zimmermann, L. Hirsch, G. Wantz, Z. Sun, P. Singh, C. Bapat, T. Offermans, F. C. Krebs,
    "Worldwide outdoor round robin study of organic photovoltaic devices and modules",
    Solar Energy Materials and Solar Cells, Vol. 130, p. 281-290, Nov. 2014,
    DOI: 10.1016/j.solmat.2014.07.021

  16. N. Wrachien, A. Cester, N. Lago, G. Meneghesso, R. D'Alpaos, A. Stefani, G. Turatti, M. Muccini,
    "Stress-induced degradation of p- and n-type organic thin-film-transistors in the ON and OFF states",
    Microelectronics Reliability, Vol. 54, n. 9, p. 1638-1642, Sept. 2014,
    DOI: 10.1016/j.microrel.2014.07.065

  17. M. Barbato, V. Giliberto, A. Cester, G. Meneghesso,
    "A combined mechanical and electrical characterization procedure for investigating the dynamic behavior of RF-MEMS switches",
    IEEE - Transactions on Device and Materials Reliability, Vol. 14, n. 1, p. 13-20, March 2014,
    DOI: 10.1109/TDMR.2013.2282636

  18. N. Wrachien, A. Cester, D. Bari, R. Capelli, R. D'Alpaos, M. Muccini, A. Stefani, G. Turatti, G. Meneghesso, "Effects of Constant Voltage Stress on p- and n-type Organic Thin Film Transistors with Poly(methyl methacrylate) Gate Dielectric ", Microelectronics Reliability, Vol. 53, n. 9–11, p. 1798-1803, September–November 2013,
    DOI: 10.1016/j.microrel.2013.07.085

  19. D. Bari, N. Wrachien, R. Tagliaferro, T.M. Brown, A. Reale, A. Di Carlo, G. Meneghesso, A. Cester,
    "Comparison between positive and negative constant current stress on dye-sensitized solar cells ",
    Microelectronics Reliability, Vol. 53, n. 9–11, p. 1804-1808, September–November 2013,
    DOI: 10.1016/j.microrel.2013.07.093

  20. A. Compagnin, M. Meneghini, M. Barbato, V. Giliberto, A. Cester, M. Vanzi, G. Mura, E. Zanoni, G. Meneghesso,
    "Thermal and electrical investigation of the reverse bias degradation of silicon solar cells",
    Microelectronics Reliability, Vol. 53, n. 9–11, p. 1809-1813, September–November 2013,
    DOI: 10.1016/j.microrel.2013.07.013

  21. G. Meneghesso, M. Meneghini, D. Bisi, I. Rossetto, A. Cester, U.K. Mishra, Enrico Zanoni,
    "Trapping phenomena in AlGaN/GaN HEMTs: a study based on pulsed and transient measurements",
    Semiconductor Science and Technology, Vol. 28, p. 074021-8, June 2013,
    DOI: 10.1088/0268-1242/28/7/074021

  22. N. Wrachien, A. Cester, B. Daniele, J. Kovac, J. Jakabovic, M. Weis, D. Donoval, G. Meneghesso,
    "Improved Tolerance against UV and Alpha Irradiation of Encapsulated Organic TFTs",
    IEEE - Transaction on Nuclear Science, Vol. 59, n. 6, p. 2979 - 2986, Dec 2012,
    DOI: 10.1109/TNS.2012.2222439

  23. D. Bari, N. Wrachien, R. Tagliaferro, T.M. Brown, A. Reale, A. Di Carlo, G. Meneghesso, A. Cester,
    "Reliability study of dye-sensitized solar cells by means of solar simulator and white LED ",
    Microelectronics Reliability, Vol. 52, n. 9–10, p. 2495–2499, September–October 2012,
    DOI: 10.1016/j.microrel.2012.06.061

  24. N. Wrachien, D. Bari, J. Kovac, J. Jakabovic, D. Donoval, G. Meneghesso, A. Cester,
    "Enhanced permanent degradation of organic TFT under electrical stress and visible light exposure",
    Microelectronics Reliability, Vol. 52, n. 9–10, p. 2490-2494, September–October 2012,
    DOI: 10.1016/j.microrel.2012.06.055

  25. N. Wrachien, A Cester, D. Bari, J. Kovac, J. Jakabovic, D. Donoval, G. Meneghesso,
    "Visible Light and Low-Energy UV Effects on Organic Thin-Film Transistors ",
    IEEE Transaction on Electron Devices, Vol. 59, n. 5, p. 1501-1509, May 2012,
    DOI: 10.1109/TED.2012.2187338

  26. D. Bari, A Cester, N. Wrachien, L. Ciammaruchi, T.M. Brown, A. Reale, A. Di Carlo, G. Meneghesso,
    "Reliability Study of Ruthenium-Based Dye-Sensitized Solar Cells (DSCs) ",
    IEEE - Journal of Photovoltaics, Vol. 2, n. 1, p. 27 - 34, Jan. 2012,
    DOI: 10.1109/JPHOTOV.2011.2180702

  27. N. Wrachien, A Cester, D. Bari, J. Kovac, J. Jakabovic, D. Donoval, and G. Meneghesso,
    "Near-UV Irradiation Effects on Pentacene Based Organic Thin Film Transistors",
    IEEE - Transaction on Nuclear Science, Vol. 58, p. 2911 - 2917, Dec. 2011,
    DOI: 10.1109/TNS.2011.2170432

  28. D. Bari, N. Wrachien, R. Tagliaferro, S. Penna, T.M. Brown, A. Reale, A. Di Carlo, G. Meneghesso, A. Cester,
    "Thermal stress effects on Dye-Sensitized Solar Cells (DSSCs)",
    Microelectronics Reliability, Vol 51, n. 9-11, p. 1762-1766, September-November 2011,
    DOI: 10.1016/j.microrel.2011.07.061

  29. N. Wrachien, A. Cester, Y.Q. Wu and P.D. Ye, E. Zanoni, G. Meneghesso,
    "Effects of positive and negative stress on III-V MOSFETs with Al2O3 gate dielectric",
    IEEE - Electron Device Letters, Vol.32, n. 4, Pages 488-490, April 2011,
    DOI: 10.1109/LED.2011.2106107

  30. C. Gerardi, A. Cester, S. Lombardo, R. Portoghese, N. Wrachien,
    "Nanocrystal Memories: An Evolutionary Approach to Flash Memory Scaling and a Class of Radiation-Tolerant Devices",
    (book chapter): in: "Radiation Effects in Semiconductors, p. 103-147, Editor: K. Iniewski, CMOS Emerging Technologies Inc., Vancouver, British Columbia, August 19, 2010,
    ISBN: (Print) 978-1-4398-2694-2, (eBook) 978-1-4398-2695-9,
    WEB: http://www.crcnetbase.com/isbn/9781439826959

  31. A. Cester, D. Bari, J. Framarin, N. Wrachien, G. Meneghesso, S. Xia, V. Adamovich, J.J. Brown,
    "Thermal and electrical stress effects of electrical and optical characteristics of Alq3/NPD OLED",
    Microelectronics Reliability, Vol. 50, n. 9-11, p. 1866 - 1870, 2010,
    DOI: 10.1016/j.microrel.2010.07.114

  32. C. Claeys, S. Put, A. Griffoni, A. Cester, S. Gerardin, G. Meneghesso, A. Paccagnella, E. Simoen,
    "Impact of Radiation on the Operation and Reliability of Deep Submicron CMOS Technologies",
    ECS Transactions, Vol. 27, n. 1, p. 39 - 46, 2010,
    DOI: 10.1149/1.3360593

  33. A. Pinato, A. Cester M. Meneghini, N. Wrachien, A. Tazzoli, S. Xia, V. Adamovich, M. S. Weaver, J.J. Brown, E. Zanoni, G. Meneghesso,
    "Impact of Trapped Charge and Interface Defects on the Degradation of the Optical and Electrical Characteristics in NPD/Alq3 OLEDs",
    IEEE- Transaction on Electron Devices, Vol. 57, n. 1, p. 178 - 187, Jan. 2010,
    DOI: 10.1109/TED.2009.2034505

  34. M. Portia, M. Nafria, S. Gerardin, X. Aymerich, A. Cester, A. Paccagnella, G. Ghidini,
    "Implanted and irradiated SiO2/Si structure electrical properties at the nanoscale",
    Journal of Vacuum Science and Technology B, Vol. 27, p. 421-425, 2009,
    DOI: 10.1116/1.3043475

  35. A. Cester, N. Wrachien, J. Schwank, G. Vizkelethy, R. Portoghese, C. Gerardi,
    "Modeling of Heavy Ion Induced Charge Loss Mechanisms in Nanocrystal Memory Cell",
    IEEE - Transactions on Nuclear Science, Vol. 55 N. 6, p. 2895-2903, Dec. 2008,
    DOI: 10.1109/TNS.2008.2006051

  36. N. Wrachien, A. Cester, R. Portoghese, and C. Gerardi,
    "Investigation of Proton and X-Ray Irradiation Effects on Nanocrystal and Floating Gate Memory Cell Arrays",
    IEEE - Transactions on Nuclear Science, Vol. 55, n. 6, p. 3000 - 3008, 2008,
    DOI: 10.1109/TNS.2008.2006483

  37. M. Zanata, N. Wrachien, A. Cester,
    "Ionizing Radiation Effects on Ferroelectric Non Volatile Memories and its Dependence on the Irradiation Temperature",
    IEEE - Transactions on Nuclear Science, Vol. 55, n. 6, p. 3237 - 3245, 2008,
    DOI: 10.1109/TNS.2008.2006052

  38. N. Wrachien, W. Autizi, A. Cester, R. Portoghese, C. Gerardi,
    "Readout drain current dependence of programming window in nanocrystal memory cells",
    Electronics Letters, Vol. 44, n. 6, p. 445 - 446, 13rd March 13 2008,
    DOI: 10.1049/el:20083558

  39. A. Cester, N. Wrachien, A. Gasperin, A. Paccagnella, R. Portoghese, C. Gerardi,
    "Radiation Tolerance of Nanocrystal-Based Flash Memory Arrays Against Heavy Ion Irradiation",
    IEEE - Transactions on Nuclear Science, Vol. 54, n. 6, p. 2196 - 2203, 2007,
    DOI: 10.1109/TNS.2007.908757

  40. M. Porti, S. Gerardin, M. Nafrìa, X. Aymerich, A. Cester, A. Paccagnella,
    "Using AFM Related Techniques for the Nanoscale Electrical Characterization of Irradiated Ultrathin Gate Oxides",
    IEEE - Transactions on Nuclear Science, Vol. 54, n. 6, p. 1891-1897, 2007,
    DOI: 10.1109/TNS.2007.909483

  41. A. Griffoni, S. Gerardin, A. Cester, A. Paccagnella, E. Simoen, C. Claeys,
    "Effects of Heavy-Ion Strikes on Fully Depleted SOI MOSFETs With Ultra-Thin Gate Oxide and Different Strain-Inducing Techniques",
    IEEE - Transactions on Nuclear Science, Vol. 54, n. 6, p. 2257 - 2263, 2007,
    DOI: 10.1109/TNS.2007.909510

  42. S. Gerardin, A. Griffoni, A. Tazzoli, A. Cester, G. Meneghesso, A. Paccagnella,
    "Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs With Ultra-Thin Gate Oxide",
    IEEE - Transactions on Nuclear Science, Vol. 54, n. 6, p. 2204 - 2209, 2007,
    DOI: 10.1109/TNS.2007.910848

  43. A. Gasperin, G. Ghidini, A. Cester, A. Paccagnella,
    "Oxide–Nitride–Oxide Capacitor Reliability Under Heavy-Ion Irradiation",
    IEEE - Transactions on Nuclear Science, Vol. 54, n. 6, p. 1898 - 1905, 2007,
    DOI: 10.1109/TNS.2007.910120

  44. A. Cester, A. Gasperin, N. Wrachien, A. Paccagnella, V. Ancarani and C. Gerardi,
    "Ionising radiation and electrical stress on nanocrystal memory cell array",
    Microelectronics Reliability, Vol. 47, n. 4-5, p. 602 - 605, April-May 2007,
    DOI: 10.1016/j.microrel.2007.01.008

  45. J. Martín-Martínez, S. Gerardin, R. Rodríguez, M. Nafría, X. Aymerich, A. Cester, A. Paccagnella, G. Ghidini,
    "Lifetime estimation of analog circuits from the electrical characteristics of stressed MOSFETs",
    Microelectronics Reliability, Vol. 47, n. 9-11, p. 1349-1352, 2007,
    DOI: 10.1016/j.microrel.2007.07.088

  46. M. Porti, S. Gerardin, M. Nafrìa, X. Aymerich, A. Cester, A. Paccagnella, P. Schiavuta, R. Pierobon,
    "Systematic characterization of soft- and hard-breakdown spots using techniques with nanometer resolution",
    Microelectronic Engineering, Vol. 84, n. 9-10, p. 1956-1959, 2007,
    DOI: 10.1016/j.mee.2007.04.063

  47. G. Cellere, A. Cester, A. Paccagnella,
    Radiation Induced Charge Loss Mechanisms Across the Dielectrics of Floating Gate Flash Memories",
    ECS Transactions, Vol. 6, n. 3, p. 807-843, 2007,
    DOI: 10.1149/1.2728834

  48. A. Cester, A. Gasperin, N. Wrachien, A. Paccagnella, V. Ancarani, C. Gerardi,
    "Impact of Heavy-Ion Strikes on Nanocrystal Non Volatile Memory Cell Arrays",
    IEEE - Transactions on Nuclear Science, Vol. 53, n. 6, p. 3195-3202, 2006,
    DOI: 10.1109/TNS.2006.885004

  49. A. Gasperin, A. Cester, N. Wrachien, A. Paccagnella, V. Ancarani, C. Gerardi,
    "Radiation-Induced Modifications of the Electrical Characteristics of Nanocrystal Memory Cells and Arrays",
    IEEE - Transactions on Nuclear Science, Vol. 53, n. 6, p. 3693-3700, 2006,
    DOI: 10.1109/TNS.2006.885109

  50. S.Gerardin, M. Bagatin, A. Cester, A. Paccagnella, B. Kaczer,
    "Impact of Heavy-Ion Strikes on Minimum-Size MOSFETs With Ultra-Thin Gate Oxide",
    IEEE - Transactions on Nuclear Science, Vol. 53, n. 6, p. 3675-3680, Dec. 2006,
    DOI: 10.1109/TNS.2006.885374

  51. S. Gerardin, A. Gasperin, A. Cester, A. Paccagnella, G. Ghidini, A. Candelori, N. Bacchetta, D. Bisello, M. Glaser,
    "Impact of 24-GeV proton irradiation on 0.13-um CMOS devices",
    IEEE - Transactions on Nuclear Science, Vol. 53, n. 4, p. 1917-1922, 2006,
    DOI: 10.1109/TNS.2006.880943

  52. S. Gerardin, A. Griffoni, A. Cester, A. Paccagnella, G. Ghidini,
    "Degradation of Static and Dynamic Behavior of CMOS Inverters during Constant and Pulsed Voltage Stress",
    Microelectronics Reliability, Vol. 46, n. 9-11, p. 1669–1672, Sept.-Nov. 2006,
    DOI: 10.1016/j.microrel.2006.07.052

  53. A. Cester, S. Gerardin, A. Tazzoli, G. Meneghesso,
    "Electrostatic Discharge Effects in Ultrathin Gate Oxide MOSFETs",
    IEEE - Transactions on Device and Material Reliability, Vol. 6, n. 1, p. 87-94, March 2006,
    DOI: 10.1109/TDMR.2006.871413

  54. M. Bagatin, S. Gerardin, P. Rech, A. Cester, A. Paccagnella,
    "Assessing SRAM sensitivity to ionizing radiation through a low-energy accelerator",
    LNL Annual Report 2006p. 82-83, 2006,
    WEB: http://www.lnl.infn.it/~annrep/index.htm

  55. S. Gerardin, M. Bagatin, A. Cester, A. Paccagnella, B. Kaczer,
    "Electrical modifications induced by heavy-ion strikes on minimum-size MOSFETs",
    LNL Annual Report 2006, p. 84-85, 2006,
    WEB: http://www.lnl.infn.it/~annrep/index.htm

  56. S. Gerardin, A. Cester, A. Paccagnella, G. Gasiot, P. Mazoyer, P. Roche,
    "Radiation-Induced Breakdown in 1.7 nm Oxynitrided Gate Oxides",
    IEEE - Transactions on Nuclear Science, Vol. 52, n. 6, p. 2210-2216, Dec. 2005,
    DOI: 10.1109/TNS.2005.860666

  57. A. Cester, S. Gerardin A. Paccagnella, E. Simoen, C. Claeys,
    "Electrical Stresses on Ultra-Thin Gate Oxide SOI MOSFETs After Irradiation",
    IEEE - Transactions on Nuclear Science, Vol. 52, n. 6, p. 2252 – 2258, Dec. 2005,
    DOI: 10.1109/TNS.2005.860666

  58. M. Porti, M. Nafria, X. Aymerich, A. Cester, A. Paccagnella, S. Cimino,
    "Electrical Characterization at a Nanometer Scale of Weak Spots in Irradiated SiO2 Gate Oxides",
    IEEE - Transactions on Nuclear Science, Vol. 52, n. 5, p. 1457 – 1461, Oct. 2005,
    DOI: 10.1109/TNS.2005.855647

  59. E. Miranda, A. Cester, J. Suñe, A. Paccagnella, A. Ghidini,
    "Simulation of the Time-Dependent Breakdown Characteristics of Heavy-Ion Irradiated Gate Oxides Using a Mean-Reverting Poisson-Gaussian Process",
    IEEE – Transaction on Nuclear Science, Vol. 52, n. 5, p. 1462–1467, Oct. 2005,
    DOI: 10.1109/TNS.2005.855808

  60. S. Gerardin, A. Cester, A. Paccagnella, G. Ghidini,
    "Impact of Fowler-Nordheim and channel hot carrier stresses on MOSFETs with 2.2nm gate oxide",
    Microelectronic Engineering, Vol. 80, p. 178-181, 17 June 2005,
    DOI: 10.1016/j.mee.2005.04.064

  61. M. Porti, M. Nafría, X. Aymerich, A. Cester, A. Paccagnella, S. Cimino,
    "Irradiation induced weak spots in SiO2 gate oxides of MOS devices observed with C-AFM",
    IEE-Electronics Letters, Vol. 41, n. 2, p. 1-2, Jan. 2005,
    DOI: 10.1049/el:20057289

  62. A. Paccagnella and A. Cester,
    "New Issues in Radiation Effects on Semiconductor Devices",
    Emerging Applications of Radiation in Nanotechnology - International Atomic Energy Agency TECDOC 1438, p. 193-212,
    ISBN:92-0-100605-5,
    WEB: IAEA TECDOC 1438

  63. A. Cester, S. Gerardin, A. Paccagnella, E. Simoen, C. Claeys,
    "Effect of Heavy Ion irradiation and Electrical Stress on Ultra-Thin Gate Oxide SOI MOSFET",
    LNL Annual Report 2005, p. 73-74, 2005,
    WEB: http://www.lnl.infn.it/~annrep/index.htm

  64. S. Gerardin, A. Cester, A. Paccagnella, G. Ghidini,
    "MOSFET drain current reduction under Fowler-Nordheim and channel hot carrier injection before gate oxide breakdown",
    Material Science Semiconductor Processing, Vol. 7, p. 175-180, 2004,
    DOI: 10.1016/j.mssp.2004.09.114

  65. A. Cester, S. Gerardin, A. Paccagnella, J.R. Schwank, G. Vizkelethy, A. Candelori, G. Ghidini,
    "Drain Current Decrease in MOSFETs After Heavy Ion Irradiation",
    IEEE - Transactions on Nuclear Science, Vol. 51, n. 6, p. 3150-3157, Dec. 2004,
    DOI: 10.1109/TNS.2004.839203

  66. A. Cester, A. Paccagnella,
    "Ionising Radiation Effects on Ultra-Thin Gate oxide MOS",
    International Journal of High Speed Electronics and Systems, Vol. 14, n. 2, Pages 563-574, June 2004,
    DOI: 10.1142/S012915640400251X

  67. A. Cester, A. Paccagnella, G. Ghidini, S. Deleonibus, G. Guegan,
    "Collapse of MOSFET Drain Current After Soft Breakdown",
    IEEE - Transactions on Device and Material Reliability, Vol. 4, n. 1, p. 63-72, March 2004,
    DOI: 10.1109/TDMR.2003.820296

  68. A. Cester, L. Bandiera, S. Cimino, A. Paccagnella, G. Ghidini,
    "Incidence of Oxide and Interface Degradation on MOSFET Performance",
    Microelectronics Engineering, Vol. 72, n. 1-4, p. 66-70, April 2004,
    DOI: 10.1016/j.mee.2003.12.018

  69. A. Cester, A. Paccagnella,
    "Ionizing Radiation Effects on Ultra-Thin Oxide MOS Structures",
    in: R. D. Schrimpf, D. M. Fleetwood. "Radiation Effects and Soft Errors in Integrated Circuits and Electronic Devices", Vol. 34, World Scientific, 2004, ISBN: 9789812794703,
    DOI: 10.1142/S012915640400251X

  70. M. Porti, M. Nafría, X. Aymerich, A. Cester, A. Paccagnella,
    "Conductive atomic force microscope characterization of weak spots in irradiated ultra-thin gate oxides",
    LNL - Annual Report 2004, p. 115-116, 2004,
    WEB: http://www.lnl.infn.it/~annrep/index.htm

  71. A. Cester, S. Cimino, E. Miranda, A. Candelori, G. Ghidini, A. Paccagnella,
    "Statistical Model for Radiation Induced Wear-Out of Ultra-Thin Gate Oxides after Exposure to Heavy Ion Irradiation",
    IEEE - Transactions on Nuclear Science, Vol. 50, n. 6, p. 2167-2175, Dec. 2003,
    DOI: 10.1109/TNS.2003.821606

  72. E. Miranda, A. Cester, A. Paccagnella,
    "Stochastic modeling of progressive breakdown in ultrathin SiO2 films",
    Applied Physics Letter, Vol. 83, n. 24, p. 5014-5016, Dec. 2003,
    DOI: 10.1063/1.1634372

  73. E. Miranda and A. Cester,
    "Degradation Dynamics of Ultrathin Gate Oxides Subjected to Electrical Stress",
    IEEE - Electronic Devices Letters, Vol. 24, n. 9, p. 604-606, Sep. 2003,
    DOI: 10.1109/LED.2003.816576

  74. S. Cimino, A. Cester, A. Paccagnella, G. Ghidini,
    "Ionising Radiation Effects on MOSFET Drain Current",
    Microelectronics and Reliability, Vol. 43, n. 8, p. 1247-1251, Aug. 2003,
    DOI: 10.1016/S0026-2714(03)00179-3

  75. A. Cester, S. Cimino, A. Paccagnella, G. Ghibaudo, G. Ghidini, J. Wyss,
    "Accelerated Wear-out of Ultra-thin Gate Oxides After Irradiation",
    IEEE - Transactions on Nuclear Science, Vol. 50, n. 3, p. 729-734, Jun. 2003,
    DOI: 10.1109/TNS.2003.811281

  76. E. Miranda, A. Cester, A. Paccagnella,
    "Logistic Model for the leakage current in electrical stressed ultrathin gate oxide",
    IEE - Electronics Letters, Vol. 39, n. 9, p. 749-750, 1st May 2003,
    DOI: 10.1049/el:20030485

  77. A. Cester, S. Cimino, E. Miranda, A. Candelori, G. Ghidini, A. Paccagnella,
    "Statistical Model for Radiation Induced Wear-Out of Ultra-Thin Gate Oxides after Exposure to Heavy Ion Irradiation",
    LNL - Annual Report 2003, p. 126-127, 2003,
    DOI: http://www.lnl.infn.it/~annrep/index.htm

  78. A. Cester,
    "Wear-out and breakdown of ultra-thin gate oxides after irradiation",
    IEE- Electronics Letters, Vol. 38, n. 19, p. 1137-1139, 12th September 2002,
    DOI: 10.1049/el:20020757

  79. A. Cester, L. Bandiera, G. Ghidini, I. Bloom, A. Paccagnella,
    "Soft Breakdown Current Noise in Ultra-thin Gate Oxides",
    Solid-State Electronics, Vol. 46, p. 1019-1025, 2002,
    DOI: 10.1016/S0038-1101(02)00036-9

  80. A. Cester, A. Paccagnella, G. Ghidini,
    "Stress induced leakage current under pulsed voltage stress",
    Solid-State Electronics, Vol. 46, n. 3, p. 399-405, March 2002,
    DOI: 10.1016/S0038-1101(01)00121-6

  81. S. Cimino, A. Cester, A. Paccagnella, G. Ghidini,
    “Ionising Radiation Effects on MOSFET Drain Current”,
    LNL – Annual Report, p. 124-125, 2002,
    DOI: http://www.lnl.infn.it/~annrep/index.htm

  82. A. Cester, L. Bandiera, M. Ceschia, G. Ghidini, A. Paccagnella,
    "Noise Characteristics of Radiation Induced Soft Breakdown Current in Ultra-Thin Gate Oxides",
    IEEE - Transactions on Nuclear Science, Vol. 48, n. 6, p. 2375-2382, Dec. 2001,
    DOI: 10.1109/23.983178

  83. A. Cester, A. Paccagnella, J. Suné, E. Miranda,
    "Post-radiation-induced soft breakdown conduction properties as a function",
    Applied Physics Letters, Vol. 79, n. 9, p. 1336-1338, 27 Aug. 2001,
    DOI: 10.1063/1.1398329

  84. L. Bandiera, A. Cester, A. Paccagnella, G. Ghidini, I. Bloom,
    "Detrended fluctuation analysis of the soft breakdown current",
    Microelectronics Engineering, Vol. 59, n. 1-4, p. 49-53, Nov. 2001,
    DOI: 10.1016/S0167-9317(01)00643-8

  85. A. Cester, A. Paccagnella, G. Ghidini,
    "Time decay of stress induced leakage current in thin gate oxides by low-field electron injection",
    Solid-State Electronics, Vol. 45, n. 8, p. 1345-1353, Aug. 2001,
    DOI: 10.1016/S0038-1101(00)00264-1

  86. A. Cester,
    "Recovery of SILC in ultra-thin gate oxides by low field electron injection",
    Alta Frequenza - Rivista di Elettronica, Vol. 13, n. 1, p. 53-55, Jan./Feb. 2001

  87. A. Cester, A. Paccagnella, G. Ghidini,
    "Pulsed Voltage Stress on thin oxides",
    IEE - Electronics Letters, Vol. 36, n. 15, p. 1319-1320, 20th July 2000,
    DOI: 10.1049/el:20000946

  88. A. Cester, A. Paccagnella, G. Ghidini,
    "Time decay of stress induced leakage current in thin gate oxides by low-field electron injection",
    Microelectronics and Reliability, Vol. 40, n- 4-5, p. 715-718, Apr. 2000,
    DOI: 10.1016/S0026-2714(99)00283-8

  89. M. Ceschia, A. Paccagnella, A. Cester, G. Ghidini, J. Wyss,
    "From Radiation Induced Leakage Current to soft-breakdown in irradiated MOS devices with ultra-thin gate oxide",
    Proceedings of Material Research Society Symposium, Vol. 592, p. 201-206, 2000,
    DOI: 10.1557/PROC-592-201

  90. M. Ceschia, A. Paccagnella, A. Cester, A. Scarpa, A. Candelori, G. Ghidini,
    "Low-field current on thin oxides after constant current or radiation stresses",
    Journal of Non-Crystalline Solids, Vol. 245, n. 1-3, p. 232-237, Apr. 1999,
    DOI: 10.1016/S0022-3093(98)00865-5

  91. M. Ceschia, A. Paccagnella, A. Scarpa, A. Cester, G. Ghidini,
    "Total dose dependence of radiation-induced leakage current in ultra-thin gate oxides",
    Microelectronics and Reliability, Vol. 39, n. 2, p. 221-226, Feb. 1999,
    DOI: 10.1016/S0026-2714(98)00233-9

  92. M. Ceschia, A. Paccagnella, A. Cester, A. Scarpa, G. Ghidini,
    "Radiation Induced Leakage Current and Stress Induced Leakage Current in Ultra-Thin Gate Oxides",
    IEEE - Transactions on Nuclear Science, Vol. 45, n. 6, p. 2375-2382, Dec. 1998,
    DOI: 10.1109/23.736457

Conferences

  1. L. Torto, A. Cester, L. Passarini, A. Rizzo, N. Wrachien, M. Seri, M. Muccini,
    "Open Circuit Voltage Decay as a Tool to Asses the Reliability of Organic Solar Cells: P3HT:PCBM vs. HBG1:PCBM,
    IEEE International Reliability Physics Symposium (IRPS 2017), p. 2F2.1 - 2F2.10, 2-6 Apr 2017, Monterey (CA), USA,
    DOI:10.1109/IRPS.2017.7936272

  2. L. Torto, A. Rizzo, A. Cester, N. Wrachien, L. Passarini, F. C. Krebs, M. Corazza, S. A. Gevorgyan
    "Analysis of electrical and thermal stress effects on PCBM:P3HT solar cells by photocurrent and impedance spectroscopy modeling,
    IEEE International Reliability Physics Symposium (IRPS 2017), p. 2F4.1 - 2F4.10, 2-6 Apr 2017, Monterey (CA), USA,
    DOI:10.1109/IRPS.2017.7936274

  3. A. Rizzo, L. Ortolan, S. Murrone, L. Torto, M. Barbato, N. Wrachien, A. Cester,
    "Effects of Thermal Stress on Hybrid Perovskite Solar Cells with Different Encapsulation Techniques,
    IEEE International Reliability Physics Symposium (IRPS 2017), p. PV-1.1 - PV-1.6, 2-6 Apr 2017, Monterey (CA), USA,
    DOI:10.1109/IRPS.2017.7936396

  4. M. Barbato, A. Barbato, A. Cester, V. Mulloni and G. Meneghesso,
    "Evidence of Mechanical Degradation in Microelectromechanical Switches Subjected to Long-Term Stresses,
    IEEE International Reliability Physics Symposium (IRPS 2017), p. PA-1.1 - PA-1.5, 2-6 Apr 2017, Monterey (CA), USA,
    DOI:10.1109/IRPS.2017.7936380

  5. N. Wrachien, L. Torto, N. Lago, A. Rizzo, G. Meneghesso, R. D’Alpaos, G. Generali, G. Turatti, M. Muccini, A. Cester,
    "Thermal Stress Effects on Organic-Thin-Film-Transistors",
    12th International Conference on Organic Electronics (ICOE 2016), p. 79-80, 13-15 June 2016, Bratislava (Slovak Republic),
    DOI:

  6. A. Rizzo, A. Cester, L. Torto, M. Barbato, N. Wrachien, N. Lago, M. Corazza, F. C. Krebs, S. A. Gevorgyan,
    "Effects of Current Stress and Thermal Storage on polymeric heterojunction P3HT:PCBM solar cell",
    IEEE International Reliability Physics Symposium (IRPS 2016), p. 3C-2-1 - 3C-2-6, 17-21 Apr 2016, Pasadena (CA), USA,
    DOI:10.1109/IRPS.2016.7574523

  7. N. Wrachien, M. Barbato, A. Cester, A. Rizzo, G. Meneghesso, R. D’Alpaos, G. Turatti, G. Generali, M. Muccini,
    "Analysis of ESD Effects on Organic Thin-Film-Transistors by Means of TLP Technique",
    IEEE International Reliability Physics Symposium (IRPS 2016), p. EL-6-1 - EL-6-5, 17-21 Apr 2016, Pasadena (CA), USA,
    DOI:10.1109/IRPS.2016.7574607

  8. M. Barbato, M. Meneghini, A. Cester, A. Barbato, G. Meneghesso, G. Tavernaro, and M. Rossetto,
    "Potential Induced Degradation in High-Efficiency Bifacial Solar Cells",
    IEEE International Reliability Physics Symposium (IRPS 2016), p. PV-2-1 - PV-2-5, 17-21 Apr 2016, Pasadena (CA), USA,
    DOI:10.1109/IRPS.2016.7574634

  9. M. Natali, N. Lago, M. Brucale, S. D. Quiroga, S. Bonetti, E. Benvenuti, E. Bonaretti, N. Wrachien, M. Muccini1, A. Cester, V. Benfenati, S. Toffanin,
    "Investigation on the Mechanism of Bioelectrical Transduction at the Organic/Electrolyte Interface in Perylene-Based O-CST",
    Materials Research Society - Fall Meeting 2015, 29 Nov. - 4 Dec. 2015, Boston,Massachusetts, USA,
    DOI:

  10. M. Barbato, M. Meneghini, A. Cester, A. Barbato, E. Zanoni, G. Meneghesso, G. Mura, D. Tonini, A. Voltan, G. Cellere,
    "Stress-induced instabilities of shunt paths in high efficiency MWT solar cells",
    IEEE International Reliability Physics Symposium (IRPS 2015), p. 3E.3.1 - 3E.3.5, 19-23 Apr 2015, Monterey (CA), USA,
    DOI: 10.1109/IRPS.2015.7112717

  11. A. Cester, N. Wrachien, M. Bon, G. Meneghesso, R. Bertani, R. Tagliaferro, S. Casolucci, T.M. Brown, A. Reale, A. Di Carlo,
    "Degradation mechanisms of dye-sensitized solar cells: Light, bias and temperature effects",
    IEEE International Reliability Physics Symposium (IRPS 2015), p. 3E.2.1 - 3E.2.8, 19-23 Apr 2015, Monterey (CA), USA,
    DOI: 10.1109/IRPS.2015.7112716

  12. N. Wrachien, A. Cester, R. D'Alpaos, G. Turatti, M. Muccini, G. Meneghesso,
    "Bias Stress on Complementary Logic Inverters with Organic TFTs",
    Chemistry Materials & Light, p. P-6, 21-23 Sept. 2015, Bologna, Italy

  13. N. Wrachien, A. Cester, N. Lago, G. Meneghesso, R. D'Alpaos, A. Stefani, G. Turatti, M. Muccini,
    "Effects of constant voltage stress on organic complementary logic inverters",
    44th European Solid State Device Research Conference (ESSDERC 2014), p. 298-301, 22-25 Sep 2014, Venezia, Italy,
    DOI: 10.1109/ESSDERC.2014.6948819

  14. M. Barbato, A. Cester, V. Mulloni, B. Margesin, G. De Pasquale, A. Soma, G. Meneghesso,
    "Reliability of capacitive RF MEMS switches subjected to repetitive impact cycles at different temperatures",
    44th European Solid State Device Research Conference (ESSDERC 2014), p. 70-73, 22-25 Sep 2014, Venezia, Italy,
    DOI: 10.1109/ESSDERC.2014.6948760

  15. D. Bisi, A. Stocco, M. Meneghini, F. Rampazzo, A. Cester, G. Meneghesso, E. Zanoni,
    "Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs",
    44th European Solid State Device Research Conference (ESSDERC 2014),p. 389-392, 22-25 Sep 2014, Venezia, Italy,
    DOI: 10.1109/ESSDERC.2014.6948842

  16. D. Bisi, A. Stocco, M. Meneghini, F. Rampazzo, A. Cester, G. Meneghesso, E. Zanoni,
    "High-voltage double-pulsed measurement system for GaN-based power HEMTs",
    IEEE International Reliability Physics Symposium - IRPS 2014, 1-5 Jun 2014 , Waikoloa, HI, USA,
    DOI: 10.1109/IRPS.2014.6861130

  17. M. Meneghini, I. Rossetto, D. Bisi, A. Stocco, A. Cester, G. Meneghesso, E. Zanoni, A. Chini, A. Pantellini, C. Lanzieri,
    "Role of buffer doping and pre-existing trap states in the current collapse and degradation of AlGaN/GaN HEMTs",
    IEEE International Reliability Physics Symposium - IRPS 2014, 1-5 Jun 2014 , Waikoloa, HI, USA,
    DOI: 10.1109/IRPS.2014.6861113

  18. G. Meneghesso, R. Silvestri, M. Meneghini, A. Cester, E. Zanoni, G. Verzellesi, G. Pozzovivo, S. Lavanga, T. Detzel, O. Häberlen, G. Curatola,
    "Threshold voltage instabilities in D-mode GaN HEMTs for power switching applications",
    IEEE International Reliability Physics Symposium - IRPS 2014, 1-5 Jun 2014 , Waikoloa, HI, USA,
    DOI: 10.1109/IRPS.2014.6861109

  19. A. Cester,
    "Organic Devices Reliability",
    (Tutorial) IEEE International Reliability Physics Symposium - IRPS 2014, 1-5 Jun 2014 , Waikoloa, HI, USA

  20. A. Compagnin, M. Meneghini, V. Giliberto, M. Barbato, M. Marsili, A. Cester, E. Zanoni, G. Meneghesso,
    "Thermal and electrical characterization of catastrophic degradation of silicon solar cells submitted to reverse current stress",
    2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), 16 - 21 Jun 2013 , Tampa, FL, USA,
    DOI: 10.1109/PVSC.2013.6744497

  21. (INVITED) G. Meneghesso, M.Meneghini, A.Stocco, D.Bisi, C.de Santi, I.Rossetto, A.Zanandrea, A. Cester, F.Rampazzo, E.Zanoni,
    "Degradation of AlGaN/GaN HET devices: role of reverse vias and hot electron stress",
    18th Conference of "Insulating Films on Semiconductors" (INFOS2013), Cracow, Poland, 25-28 June 2013,
    ISBM: 9788378141150

  22. N. Wrachien, A Cester, D. Bari, G. Meneghesso, J. Kovac, J. Jakabovic, M. Weis, D. Donoval,
    "Effects of Positive and Negative Constant Voltage Stress on Organic TFTs",
    IEEE International Reliability Physics Symposium - IRPS 2013, Monterey, CA, USA, April, 14-18, 2013,
    DOI: 10.1109/IRPS.2013.6532123

  23. D. Bari, N. Wrachien, G. Meneghesso, and A Cester, R. Tagliaferro, T. M. Brown, A. Reale, A. Di Carlo,
    "Study of the Effects of UV-Exposure on Dye-Sensitized Solar Cells",
    IEEE International Reliability Physics Symposium - IRPS 2013, Monterey, CA, USA, April, 14-18, 2013,
    DOI: 10.1109/IRPS.2013.6532011

  24. N. Wrachien, A. Cester, D. Bari, G. Meneghesso, Y.Q. Wu, P.D. Ye,
    "Comparison between uniform and CHC stress on III-V MOSFETs",
    21st European Workshop on Heterostructure Technology - HETECH 2012, 5-7 November 2012, Barcelona, Spain

  25. N. Wrachien, A Cester, D. Bari, G. Meneghesso, J. Kovac, J. Jakabovic, D. Donoval,
    "Improved Tolerance against UV and Alpha Irradiation of Encapsulated Organic TFTs",
    IEEE Nuclear and Space Radiation Effects Conference - NSREC 2012, Miami, FL, USA, July 16-20, 2012

  26. N. D. Bari, A Cester, N. Wrachien, G. Meneghesso, R. Tagliaferro, T. M. Brown, A. Reale, A. Di Carlo,
    "Study of the Effects of UV-Exposure on Dye-Sensitized Solar Cells",
    IEEE Nuclear and Space Radiation Effects Conference - NSREC 2012, Miami, FL, USA, July 16-20, 2012

  27. N. Wrachien, A Cester, D. Bari, G. Meneghesso, J. Kovac, J. Jakabovic, D. Donoval,
    "Organic Thin Film Transistor Degradation Under Sunlight Exposure",
    IEEE - International Reliability Physics Symposium - IRPS 2012, Anaheim, CA, USA April 15-19, 2012,
    DOI: 10.1109/IRPS.2012.6241936

  28. A Cester, D. Bari, N. Wrachien, G. Meneghesso,
    "Study of the effect of stress-induced trap levels on OLED characteristics by numerical model",
    IEEE - International Reliability Physics Symposium - IRPS 2012, Anaheim, CA, USA April 15-19, 2012,
    DOI: 10.1109/IRPS.2012.6241882

  29. N. Wrachien, A. Cester, D. Bari, E. Zanoni, G. Meneghesso, Y.Q. Wu, P.D. Ye,
    "Effects of Channel Hot Carrier Stress on III-V Bulk Planar MOSFETs",
    IEEE International Reliability Physics Symposium - IRPS 2012, Anaheim, CA, USA April 15-19, 2012,
    DOI: 10.1109/IRPS.2012.6241818

  30. N. Wrachien, D. Bari, J. Kovac, J. Jakabovic, D. Donoval, G. Meneghesso, A. Cester,
    "Enhanced Permanent Degradation of Organic TFT under electrical stress and visible light exposure",
    23st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - ESREF 2012, Cagliari, Italy, October 1-5, 2012

  31. D. Bari, N. Wrachien, R. Tagliaferro, T. M. Brown, A. Reale, A. Di Carlo, G. Meneghesso, A. Cester,
    "Reliability Study of Dye-Sensitized Solar Cells by means of Solar Simulator and White LED"",
    23st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - ESREF 2012, Cagliari, Italy, October 1-5, 2012

  32. N. Wrachien, A Cester, D. Bari, G. Meneghesso, J. Kovac, J. Jakabovic, D. Donoval,
    "Near-UV Irradiation Effects on Pentacene Based Organic Thin Film Transistors",
    48th IEEE - Nuclear and Space radiation Effects Conference - NSREC 2011, Las Vegas, NV, USA July 25-29, 2011

  33. N. Wrachien, A. Cester, D. Bari, G. Meneghesso, J. Kovac, J. Jakabovic, M. Sokolsky, D. Donoval, J.Cirak,
    "Low-Energy UV Effects on Organic Thin-Film-Transistors",
    Proceedings of IEEE International Reliability Physics Symposium - IRPS 2011, Monterey, CA, USA April 10-14, 2011,
    DOI: 10.1109/IRPS.2011.5784462

  34. D. Bari, N. Wrachien, A. Cester, G. Meneghesso, R. Tagliaferro, S. Penna, T. M. Brown, A. Reale, A. Di Carlo,
    "Optical Stress and Reliability Study of Ruthenium-based Dye-Sensitized Solar Cells (DSSC)",
    Proceedings of IEEE International Reliability Physics Symposium - IRPS 2011, Monterey, CA, USA April 10-14, 2011,
    DOI: 10.1109/IRPS.2011.5784537

  35. D. Bari, N. Wrachien, R. Tagliaferro, S. Penna, T.M. Brown, A. Reale, A. Di Carlo, G. Meneghesso, A. Cester,
    "Thermal stress effects on Dye-Sensitized Solar Cells (DSSCs)",
    22st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - ESREF 2011, Bordeaux - France, October 3rd-7th, 2011

  36. N. Wrachien, A. Cester, G. Meneghesso, J. Kovac, J. Jakabovic, D. Donoval,
    "Effects of soft-UV irradiation on organic thin film transistors with different gate dielectrics",
    8th International Conference on Advanced Semiconductor Devices and Microsystems - ASDAM 2010, Smolenice , Slovak Republic, October 25-27, 2010,
    DOI: 10.1109/ASDAM.2010.5666327

  37. N. Wrachien, A. Cester, N. Bellaio, A. Pinato, M. Meneghini, A. Tazzoli, G. Meneghesso, K. Myny, S. Smout, J. Genoe,
    "Light, Bias, and Temperature Effects on Organic TFTs",
    Proceedings of IEEE - International Reliability Physics Symposium - IRPS 2010, Anaheim, California, USA, May 2-6, 2010,
    DOI: 10.1109/IRPS.2010.5488806

  38. N. Wrachien, A. Cester, E. Zanoni, G. Meneghesso, Y. Q. Wu, P. D. Ye,
    "Degradation of III-V inversion-type enhancement-mode MOSFETs",
    IEEE - International Reliability Physics Symposium - IRPS 2010, Anaheim, California, USA, May 2-6, 2010,
    DOI: 10.1109/IRPS.2010.5488775

  39. A. Cester, D. Bari, J. Framarin, N. Wrachien, G. Meneghesso, S. Xiab, V. Adamovichb, J. J. Brownb,
    "Thermal and electrical stress effects of electrical and optical characteristics of Alq3/NPD OLED",
    21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - ESREF 2010, Gaeta, Italy, October 11-15, 2010

  40. N. Wrachien, A. Cester, A. Pinato, M. Meneghini, A. Tazzoli, G. Meneghesso J. Kovac, J. Jakabovic, D. Donoval,
    "Organic TFT with SiO2-Parylene Gate Dielectric Stack and Optimized Pentacene Growth Temperature", 39th European Solid-State device research Conference, ESSDERC 2009, Athen 14-18 September 2009.,
    DOI: 10.1109/ESSDERC.2009.5331324

  41. J. Kováč, J. Jakabovič, R. Srnánek, J. Kováč jr, D. Donoval, N. Wrachien, A. Cester, G. Meneghesso,
    "Growth morphologies and electrical properties of pentacene organic TFT with SiO2/parylene dielectric layer",
    33rd Workshoop on Compound Semiconductor Devices and integrated Circuits (WOCSDICE2009), Malaga, Spain, May 17-20, 2009

  42. N. Wrachien, A. Cester, A. Pinato, M. Meneghini, A. Tazzoli, G. Meneghesso, J. Kovac, J. Jakabovic, D. Donoval,
    "Threshold Voltage Instability in Organic TFT with SiO2 and SiO2/Parylene-Stack Dielectrics,",
    IEEE - International Reliability Physics Symposium - IRPS 2009, Montreal, Quebec, Canada, April 25-29, 2009,
    DOI: 10.1109/IRPS.2009.5173234

  43. A. Pinato, M. Meneghini, A. Cester, N. Wrachien, A. Tazzoli, E. Zanoni, G. Meneghesso, B. D'Andrade, J. Esler, S. Xia, J.Brown,
    "Improved Reliability of Organic Light-Emitting Diodes with Indium-Zinc-Oxide Anode Contact",
    IEEE - International Reliability Physics Symposium - IRPS 2009, Montreal, Quebec, Canada,April 25-29, 2009,
    DOI: 10.1109/IRPS.2009.5173233

  44. N. Wrachien, A. Cester, A. Pinato, M. Meneghini, A. Tazzoli, G. Meneghesso, J. Kovac, J. Jakabovic, D. Donoval,
    "Charge Trapping in Organic Thin Film Transistors",
    17th European Heterostructure Technology Workshop, HETECH 2008, Venice, Italy, November 2-5, 2008,
    ISBN: 9788861292963

  45. A. Pinato, M. Meneghini, A. Tazzoli, A. Cester, N. Wrachien, E. Zanoni, G. Meneghesso, B. D'Andrade, J. Esler, S. Xia, J.Brown,
    "Indium Zinc Oxide as an alternative to Indium Tin Oxide in OLEDs Technology",
    17th European Heterostructure Technology Workshop, HETECH 2008, Venice, Italy, November 2-5, 2008 ,
    ISBN: 9788861292963

  46. A. Cester, N. Wrachien, J. Schwank, G. Vizkelethy, R. Portoghese, C. Gerardi,
    "Modeling of Heavy Ion Induced Charge Loss Mechanisms in Nanocrystal Memory Cell",
    45th IEEE - Nuclear and Space radiation Effects Conference - NSREC 2008, Tucson, AZ, USA, 14-18 July 2008

  47. N. Wrachien, A. Cester, R. Portoghese, C. Gerardi,
    "Investigation of Proton and X-Ray Irradiation Effects on Nanocrystal and Floating Gate Memory Cell Arrays",
    45th IEEE - Nuclear and Space radiation Effects Conference - NSREC 2008, Tucson, AZ, USA, 14-18 July 2008

  48. M. Zanata, A. Cester, N. Wrachien,
    "Ionizing Radiation Effects on Ferroelectric Non Volatile Memories and its Dependence on the Irradiation Temperature",
    45th IEEE - Nuclear and Space radiation Effects Conference - NSREC 2008, Tucson, AZ, USA, 14-18 July 2008

  49. A. Cester, N. Wrachien, A. Gasperin, A. Paccagnella, R. Portoghese, C. Gerardi,
    "Radiation Tolerance of Nanocrystal-Based Flash Memory Arrays Against Heavy Ion Irradiation",
    44th IEEE - Nuclear and Space radiation Effects Conference - NSREC 2007, Honolulu, HI, USA, 23-27 July 2007

  50. M. Porti, S. Gerardin, M. Nafrìa, X. Aymerich, A. Cester, A. Paccagnella,
    "Using AFM Related Techniques for the Nanoscale Electrical Characterization of Irradiated Ultrathin Gate Oxides",
    44th IEEE - Nuclear and Space radiation Effects Conference - NSREC 2007, Honolulu, HI, USA, 23-27 July 2007

  51. A. Griffoni, S. Gerardin, A. Cester, A. Paccagnella, E. Simoen, C. Claeys,
    "Effects of Heavy-Ion Strikes on Fully Depleted SOI MOSFETs With Ultra-Thin Gate Oxide and Different Strain-Inducing Techniques",
    44th IEEE - Nuclear and Space radiation Effects Conference - NSREC 2007, Honolulu, HI, USA,23-27 July 2007

  52. S. Gerardin, A. Griffoni, A. Tazzoli, A. Cester, G. Meneghesso, A. Paccagnella,
    "“Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs With Ultra-Thin Gate Oxide",
    44th IEEE - Nuclear and Space radiation Effects Conference - NSREC 2007, Honolulu, HI, USA,23-27 July 2007

  53. A. Gasperin, G. Ghidini, A. Cester, A. Paccagnella,
    "Oxide–Nitride–Oxide Capacitor Reliability Under Heavy-Ion Irradiation",
    44th IEEE - Nuclear and Space radiation Effects Conference - NSREC 2007, Honolulu, HI, USA,23-27 July 2007

  54. A. Gasperin, N. Wrachien, A. Cester, A. Paccagnella, F. Ottogalli, U. Corda, P.G. Fuochi, M. Lavalle,
    "Total Ionizing Dose Effects on 4Mbit Phase Change Memory Arrays",
    9th European Conference Radiation and Its Effects on Components and Systems, Deauville, France, September 10-14, 2007 ,
    DOI: 10.1109/RADECS.2007.5205536

  55. A. Paccagnella, G. Cellere and A. Cester,
    "Radiation Induced Charge Loss Mechanisms Across the Dielectrics of Floating Gate Flash Memories",
    11th Electrochemical Society Meeting - Chicago, Illinois May 06 - May 10, 2007

  56. M. Porti, S. Gerardin, M. Nafrìa, X. Aymerich, A. Cester, A. Paccagnella, P. Schiavuta R. Pierobon,
    "Systematic characterization of soft- and hard-breakdown spots using techniques with nanometer resolution",
    15th biannual conference on Insulating Films on Semiconductors - INFOS 2007, Athens, Greece, June 20th - 23rd, 2007

  57. A. Gasperin, A. Cester, N. Wrachien, A. Paccagnella, C. Gerardi, V. Ancarani,
    "Role of Oxide/Nitride Interface Traps on the Nanocrystal Memory Characteristics",
    IEEE - International Reliability Physics Symposium - IRPS 2007, Phoenix, Arizona, USA, April 15-19, 2007,
    DOI: 10.1109/RELPHY.2007.369999

  58. J. Martìn-Martìnez, S. Gerardin, R. Rodriguez, M. Nafrìa, X. Aymerich, A. Cester, A. Paccagnella, G. Ghidini,
    "Lifetime estimation of analog circuits from the electrical characteristics of stressed MOSFETs",
    18th European Symposium Reliability of Electron Devices, Failure Physics and Analysis - ESREF 2007, Arcachon - France, October 8th - 12th, 2007

  59. S. Gerardin, M. Bagatin, P. Rech, A. Cester, A. Paccagnella,
    "Exploiting a Low-Energy Accelerator to Test Commercial Electronics",
    Radiation Effects on Components and Systems (RADECS 2006), Gllyfada, Athens, Greece, 27 – 29 September, 2006

  60. S. Gerardin, M. Bagatin, A. Cester, A. Paccagnella, B. Kaczer, A. Candelori,
    "Impact of Heavy-Ion Strickes On Minimum size MOSFET with ultra thin gate oxides",
    43rd IEEE - Nuclear and Space radiation Effects Conference - NSREC 2006, Ponte Vedra, FL, USA, 17-21 July 2006

  61. A. Gasperin, A. Cester, N. Wrachien, A. Paccagnella, V. Ancarani, C. Gerardi,
    "Radiation Induced Modifications of the Electrical Characteristics of Nanocrystal Memory Cells and Arrays",
    43rd IEEE - Nuclear and Space radiation Effects Conference - NSREC 2006, Ponte Vedra, FL, USA, 17-21 July 2006

  62. A. Cester, A. Gasperin, A. Paccagnella, V. Ancarani, C. Gerardi,
    "Impact of Heavy-Ion Strickes On Nananocrystal Non Volatile Memory Cell Array",
    43rd IEEE - Nuclear and Space radiation Effects Conference - NSREC 2006, Ponte Vedra, FL, USA, 17-21 July 2006

  63. A. Cester, A. Gasperin, N. Wrachien, A. Paccagnella, V. Ancarani, C. Gerardi,
    "Ionising Radiation and Electrical Stress on Nanocrystal Memory Cell Array",
    14th Workshop on Dielectrics in Microelectronics - WODIM 2006, Catania, Italy, June 26-28, 2006

  64. S. Gerardin, A. Griffoni, A. Cester, A. Paccagnella, G. Ghidini,
    "Degradation of Static and Dynamic Behavior of CMOS Inverters during Constant and Pulsed Voltage Stress",
    17th European Symposium Reliability of Electron Devices, Failure Physics and Analysis - ESREF 2006, Wuppertal - Germany, 3rd - 6th October 2006

  65. S. Gerardin, A. Cester, A. Paccagnella, G. Ghidini, A. Candelori, N. Bacchetta, D. Bisello, M. Glaser,
    "Impact of 24-GeV proton irradiation on 0.13-um CMOS devices",
    Radiation Effects on Components and Systems - RADECS 2005, Cap d'Agde, France, September 20-23, 2005,
    DOI: 10.1109/RADECS.2005.4365598

  66. A. Cester, S. Gerardin, A. Paccagnella, E. Simoen, C. Claeys, A. Candelori,
    "Heavy Ion Damage in Ultra-Thin Gate Oxide SOI MOSFETs",
    Radiation Effects on Components and Systems - RADECS 2005, Cap d'Agde, France, September 20-23, 2005,
    DOI: 10.1109/RADECS.2005.4365609

  67. A. Cester, S. Gerardin, A. Paccagnella, and G. Ghidini,
    "Modeling MOSFET and circuit degradation through SPICE",
    35st IEEE - European Solid-State Device Research Conference - ESSDERC 2005, Grenoble, France, September 13-15, 2005,
    DOI: 10.1109/ESSDER.2005.1546670

  68. S. Gerardin, A. Cester, A. Paccagnella, G. Gasiot, P. Roche, P. Mazoyer,
    "Radiation Induced Breakdown in 1.7 nm Oxynitrided Gate Oxides",
    42th IEEE - Nuclear and Space radiation Effects Conference - NSREC 2005, Seattle, Washington, USA, 11-15 July 2005

  69. A. Cester, S. Gerardin, A. Paccagnella, E. Simoen, C. Claeys,
    "Electrical Stresses on Ultra-Thin Gate Oxide SOI MOSFETs after Irradiation",
    42th IEEE - Nuclear and Space radiation Effects Conference - NSREC 2005, Seattle, Washington, USA, 11-15 July 2005

  70. A. Cester, S. Gerardin, A. Tazzoli, A. Paccagnella, E. Zanoni, G. Ghidini, G. Meneghesso,
    "ESD Induced Damage on Ultra-Thin Gate Oxide MOSFETs and its Impact on Device Reliability",
    IEEE - International Reliability Physics Symposium - IRPS 2005, San Jose, California, USA, April 17-21, 2005, pp. 84-90,
    DOI: 10.1109/RELPHY.2005.1493068

  71. M. Porti, M. Nafria, X. Aymerich, A. Cester, A. Paccagnella, S. Cimino,
    "Leaky spots in irradiated SiO2 gate oxides observed with C-AFM",
    IEEE-Spanish Conference on Electron Devices, Tarragona, Spain, February 2-4, 2005 p. 53 - 56,
    DOI: 10.1109/SCED.2005.1504304

  72. A. Paccagnella, A. Cester, G. Cellere,
    "Ionizing radiation effects on MOSFET thin and ultra-thin gate oxides",
    IEEE - International Electron Devices Meeting - IEDM 2004, San Francisco, CA, USA, December 13-15, 2004,
    DOI: 10.1109/IEDM.2004.1419192

  73. E. Miranda, A. Cester, J. Suñe, A. Paccagnella, G. Ghidini,
    "Simulation of the time-dependent breakdown characteristics of heavy ion irradiated gate oxides using a mean-reverting poisson-gaussian process",
    Radiation Effects on Components and Systems - RADECS 2004, Madrid, Spain, 22-24 September, 2004

  74. M. Porti, M. Nafría, X. Aymerich, A. Cester, A. Paccagnella, S. Cimino,
    "Electrical characterization at nanometer scale of weak spots in irradiated SiO2 gate oxides",
    Radiation Effects on Components and Systems - RADECS 2004, Madrid, Spain, 22-24 September, 2004

  75. A. Cester, S. Gerardin, S. Cimino, A. Paccagnella, J.R. Schwank, G. Vizkelethy, G. Ghidini,
    "Drain Current Decrease in MOSFETs After Heavy Ion Irradiation",
    41th IEEE - Nuclear and Space radiation Effects Conference - NSREC 2004, Atlanta, Georgia, USA, 19-23 July 2004

  76. S. Gerardin, A. Cester, A. Paccagnella, G. Ghidini,
    "MOSFET drain current reduction under Fowler-Nordheim and channel hot carrier injection before gate oxide breakdown",
    European Material Research Society Symposium - E-MRS 2004, Starsbourg, France, May 24-28, 2004

  77. (INVITED) A. Paccagnella and A. Cester,
    "New Issues in Radiation Effects on Semiconductor Devices",
    Emerging Applications of Radiation in Nanotechnology: proceedings of consultants Meeting - IAEA, Bologna, Italy, March 22-25, 2004, p. 185-204

  78. L. Bandiera, S. Cimino, A. Cester, S. Gerardin, A. Paccagnella, G. Ghidini,
    "Role of SILC related traps on channel degradation and drain current noise",
    5th European Workshop on ULtimate Integration of Silicon - ULIS 2004, Leuven, Belgium, March 11-12 2004, p. 113-116

  79. E. Miranda, L. Bandiera, A. Cester, A. Paccagnella,
    "Logistic Modeling of Progressive Breakdown in Ultrathin Gate Oxides",
    33st IEEE - European Solid-State Device Research Conference - ESSDERC 2003, Lisbon, Portugal, September 16-18 2003,
    DOI: 10.1109/ESSDERC.2003.1256816

  80. L. Bandiera, A. Cester, S. Cimino, S. Gerardin, A. Paccagnella, G. Ghidini,
    "Degradation of Low Frequency Noise and DC characteristics on MOSFETs and its correlation with SILC",
    33st IEEE - European Solid-State Device Research Conference - ESSDERC 2003, Lisbon, Portugal, September 16-18 2003,
    DOI: 10.1109/ESSDERC.2003.1256816

  81. A. Cester, S. Cimino, E. Miranda, A. Paccagnella, G. Ghibaudo, A. Candelori,
    "Statistical Model for Radiation Induced Wear-Out of Ultra-Thin Gate Oxides after Exposure to Heavy Ion Irradiation",
    40th IEEE - Nuclear and Space radiation Effects Conference - NSREC 2003, Monterey, California, USA, 21-25 July 2003

  82. A. Cester, S. Cimino, L. Bandiera, A. Paccagnalla, G. Ghidini,
    "Incidence of Oxide and Interface Degradation on MOSFET Performance",
    13th Insulating Films on semiconductors - INFOS 2003, Barcelona, Spain, June 18-20, 2003

  83. A. Cester, S. Cimino, A. Paccagnella, G. Ghidini, G. Guegan,
    "Collapse of MOSFET Drain Current After Soft Breakdown and its Dependence on the Transistor Aspect Ratio W/L",
    IEEE - International Reliability Physics Symposium - IRPS 2003, Dallas, Texas, USA, March 30 - April 4, 2003, p. 189-195,
    DOI: 10.1109/RELPHY.2003.1197744

  84. S. Cimino, A. Cester, A. Paccagnella, G. Ghidini,
    "Ionising Radiation Effects on MOSFET Drain Current",
    11th Workshop of Dielectrics in Microelectronics - WODIM 2002, Grenoble, France, November 13-15, 2002

  85. A. Cester, S. Cimino, A. Paccagnella, G. Ghibaudo, G. Ghidini,
    "Accelerated Wear-out of Ultra-thin Gate Oxides After Irradiation",
    39th IEEE - Nuclear and Space radiation Effects Conference - NSREC 2002, Phoenix, Arizona, USA, 15-19 July 2002

  86. A. Cester, L. Bandiera, J. Suñe, A. Paccagnella, L. Boschiero, G. Ghidini,
    "A Novel Approach to Quantum Point Contact for post Soft Breakdown conduction",
    IEEE - International Electron Devices Meeting - IEDM 2001, Washington D.C., USA, December 2-5, 2001,
    DOI: 10.1109/IEDM.2001.979490

  87. A. Cester, L. Bandiera, A. Paccagnella, G. Ghibaudo, G. Ghidini,
    "Wear-out and breakdown of ultra-thin oxides after exposure to ionising radiation",
    32nd IEEE - Semiconductor Interface Specialist Conference - SISC 2001, Washington D.C., USA, November 29 - December 1, 2001

  88. A. Cester, L. Bandiera, A. Paccagnella, G. Ghidini,
    "Leakage current in ultra thin oxides: SILC or Soft Breakdown?",
    31st European Solid-State Device Research Conference - ESSDERC 2001, Nuremberg, Germany, September 11-13 2001,
    DOI: 10.1109/ESSDERC.2001.195301

  89. A. Cester, L. Bandiera, M. Ceschia, G. Ghidini, A. Paccagnella,
    "Noise Characteristics of Radiation Induced Soft Breakdown Current in Ultra-Thin Gate Oxides",
    38th IEEE - Nuclear and Space radiation Effects Conference - NSREC 2001, Vancouver, British Columbia, Canada, 16-20 July 2001

  90. A. Cester, L. Bandiera, A. Paccagnella, G. Ghidini, I. Bloom,
    "Analysis and Modelling of the Soft Breakdown Current fluctuations",
    12th Insulating Films on Semiconductors - INFOS 2001, Udine, Italy, June 20-23, 2001

  91. A. Cester, A. Paccagnella, L. Bandiera, G. Ghidini, I. Bloom,
    "Soft Breakdown Current Noise in Ultra-Thin Gate Oxides",
    2nd Workshop Ultimate Integration of Silicon - ULIS 2001 Grenoble, France, January 18-19, 2001

  92. A. Cester, A. Paccagnella, G. Ghidini, I. Bloom,
    "Temperature dependence of Current Noise Fluctuations of Soft Breakdown in thin oxides",
    31st IEEE - Semiconductor Interface Specialists Conference - SISC 2000, San Diego, California, December 7-9, 2000

  93. A. Cester, A. Paccagnella, G. Ghidini, I. Bloom,
    "Temperature dependence of Soft Breakdown Current Noise and fluctuations in thin oxides",
    11th Workshop of Dielectrics in Microelectronics - WODIM 2000, Munich, Germany, November 13-15, 2000

  94. A. Cester, A. Paccagnella, L. Bandiera, G. Ghidini,
    "Switching Behaviour and Noise of Soft Breakdown Current in Ultra-Thin Gate Oxide",
    30th European Solid-State Device Research Conference - ESSDERC 2000, Cork Ireland, September 11-13, 2000,
    DOI: 10.1109/ESSDERC.2000.194824

  95. A. Cester, A. Paccagnella, L. Bandiera, M. Zanella, G. Ghidini,
    "Soft Breakdown in Ultra-Thin (<3nm) Gate Oxide after Constant Current Stress",
    Workshop on Advances in Silicon Technology and Devices, Padova, Italy, April 13-14, 2000

  96. A. Cester, A. Paccagnella, G. Ghidini,
    "Stress Induced Leakage Current under pulsed voltage stress",
    1st Workshop Ultimate Integration of Silicon - ULIS 2000, Grenoble, France, January 20-21, 2000

  97. M. Ceschia, A. Paccagnella, A. Cester, L. Larcher, G. Ghidini,
    "Temperature dependence of Stress Induced Leakage Current in ultra-thin gate oxide",
    30th IEEE - Semiconductor Interface Specialists Conference - SISC 1999, Charleston, South Carolina, December 2-4, 1999

  98. A. Cester, A. Paccagnella, M. Ceschia, G. Dosso, G. Ghidini,
    "Stress Induced Leakage Current dependence on frequency after voltage pulsed stress",
    30th IEEE - Semiconductor Interface Specialists Conference - SISC 1999, Charleston, South Carolina, December 2-4, 1999

  99. A. Cester, A. Paccagnella, G. Ghidini,
    "Time Decay of Stress Induced Leakage Current in Thin Gate Oxides by Low-Field Electron Injection",
    10th Workshop on Dielectrics in Microelectronics - WODIM 1999, Barcelona, Spain, November 3-5, 1999

  100. A. Cester, A. Paccagnella, M. Buso, G. Ghidini,
    "Time stability of Stress Induced Leakage Current in thin gate oxides",
    29th European Solid-State Device Research Conference - ESSDERC 1999, Leuven, Belgium, September 13-15, 1999,
    ISBN: 2-86332-245-1

  101. M. Ceschia, A. Cester, A. Paccagnella,
    "Stress Induced Leakage Current and Radiation Induced Leakage Current in MOS devices with ultra-thin gate oxide",
    INFM Meeting, Catania, Italy, June 14-18, 1999

  102. M. Ceschia, A. Paccagnella, A. Cester, A. Scarpa, G. Ghidini,
    "Radiation induced leakage current and stress induced leakage current on ultra-thin gate oxides"
    35th IEEE - Nuclear and Space radiation Effects Conference - NSREC 1998, Newport Beach, California, USA, 20-24 July, 1998

  103. M. Ceschia, A. Paccagnella, A. Cester, A. Scarpa, A. Candelori, G. Ghidini,
    "Low-Field Current on Thin Oxides After Constant Current or Irradiation Stresses",
    2nd French-Italian Symposium: SiO2 and Advanced Dielectrics, L'Aquila, Italy, June 15-17, 1998

  104. M. Ceschia, A. Paccagnella, A. Scarpa, G. Ghidini, A. Cester,
    "The Dependence of the Ionizing Radiation Induced Leakage Current versus the total dose on Ultra-Thin Gate Oxides",
    9th Workshop on Dielectrics in Microelectronics - WODIM 1998, Toulouse, France, March 11-13, 1998