• Investigation of advanced solar cells based on silicon: PERT, PERC, MWT, bifacial solar cells; optimization of the layout, antireflection coating, IQE, EQE, reflectivity, CV characterization.
• Solar cells on III-IV, CdTe, InGaN: material and device characterization based on C-V, DLTS, photocurrent spectroscopy, light/dark I-V, electroluminescence measurements.

• Electro-optical characterization of the performance of the devices by DC and transient measurements (Impendance spectroscopy and DLTS), the analysis of the effect of temperature on the characteristics of the devices, the impendance analysis.
• Modeling and simulation of the devices.
• Reliability study by means of DC and pulsed stress tests, thermal stress and UV exposure.

• Measurement Applications of Advanced Signal Processin Algorithms.
• Measurement for Smart Grids.

Homepage: http://measurement.dei.unipd.itPeople: Claudio Narduzzi 

• Renewable Energy Conversion.
• Industrial, Consumer and Custom Power Electronics Applications.
• Smart Micro-Grids.
• Energy Harvesting.
• Characterization of SiC and GaN Power Devices.

• Permanent radiation effects in advanced CMOS technologies: study of the microdose effects induced by heavy-ion strikes on decananometer Silicon On Insulator (SOI) transistors; effects of radiation total dose on circuits employed in space applications and high energy physics experiments; Single Event Gate Rupture (SEGR) experiments on CMOS devices.