DEI

Radiation effects on CMOS systems

Submitted by zennaro2 on Fri, 10/02/2015 - 11:26

Permanent radiation effects in advanced CMOS technologies: study of the microdose effects induced by heavy-ion strikes on decananometer Silicon On Insulator (SOI) transistors; effects of radiation total dose on circuits employed in space applications and high energy physics experiments; Single Event Gate Rupture (SEGR) experiments on CMOS devices.

Submitted by zennaro2 on Fri, 10/02/2015 - 11:22

Study of the interface betweed microelectronics and biological materials: analysis of the effects og biological components on electrical and optical parameters, using both numerical modeling and different transduction strategies, e.g., electrochemistry and plasmonics.
Devices for biological analysis and investigation: design, study, developments and characterization of new integrated microsystems able to actively and passively interact with biologic substances, in order to improve biological analysis techniques for the detection of specific target molecules.

Submitted by zennaro2 on Fri, 10/02/2015 - 11:13

Ultra low power radios for Internet of Things: design and prototyping of fully integrated transceivers based on UWB Impulse Radio technology for short-range, low data-rate applications with extremely demanding power and energy constraints.

Submitted by zennaro2 on Fri, 10/02/2015 - 11:06

Characterization of solar cells with different structures and layer composition, both polymeric and dye-sensitized solar cells; External and Internal Quantum efficiency measurements; Advanced characterization techniques such as: electroluminescence; thermal characterization; Impendance Spectroscopy (IS); Deep level transient spectroscopy (DLTS); Open Circuit Voltage Decay (OCVD); applied bias voltage decay (ABVD).
Impendance model of organic/hybrid solar cells. 1D/2D simulations.

Submitted by zennaro2 on Fri, 10/02/2015 - 10:54

Study of the physical mechanisms that limit the internal quantum efficiency of GaN-based LEDs and laser diodes emitting in the visible, NUV and DUV spectral region, based on combined EL, differential carrier lifetime, deep level transient spectroscopy measurements.
Analysis of the reliability-limiting mechanisms in GaN-based LEDs and lasers: characterization of defects, analysis of the failure modes, definition of models for the degradation processes, failure analysis; study of the effects of EOS and ESD at device and system level.

Submitted by zennaro2 on Fri, 10/02/2015 - 10:45

Characterization of OTFT and BioSensors by means of standard DC, AC and transient measurements, such as EIS (Electrochemical Impendance Spectroscopy) and DLTS (Deep level transient spectroscopy).
Modeling of OTFT and BioSensors by means of simulations, physical models, circuital models, impendance models.
Reliability study of OTFT by means of accelerated electrical stress, light and UV exposure, thermal storage.

Submitted by zennaro2 on Fri, 10/02/2015 - 10:37

Characterization of GaN based transistors for RF and power applications, and of high-voltage/high current SiC devices.
Analysis of the trapping processes that limit the dynamic performance of the devices, based on current-DLTS, capacitance-DLTS, optical-DLTS, backgating investigation; development of physical models of the charge-trapping processes; study of the interface traps by C-V, Dit and Vth transient measurements; analysis of issues related to devices with Schottky, insulated and p-type gate.