DEI

Integrated circuits for analog and radiofrequency microsystems

Submitted by zennaro2 on Fri, 10/02/2015 - 11:13

Ultra low power radios for Internet of Things: design and prototyping of fully integrated transceivers based on UWB Impulse Radio technology for short-range, low data-rate applications with extremely demanding power and energy constraints.

Submitted by zennaro2 on Fri, 10/02/2015 - 11:06

Characterization of solar cells with different structures and layer composition, both polymeric and dye-sensitized solar cells; External and Internal Quantum efficiency measurements; Advanced characterization techniques such as: electroluminescence; thermal characterization; Impendance Spectroscopy (IS); Deep level transient spectroscopy (DLTS); Open Circuit Voltage Decay (OCVD); applied bias voltage decay (ABVD).
Impendance model of organic/hybrid solar cells. 1D/2D simulations.

Submitted by zennaro2 on Fri, 10/02/2015 - 10:54

Study of the physical mechanisms that limit the internal quantum efficiency of GaN-based LEDs and laser diodes emitting in the visible, NUV and DUV spectral region, based on combined EL, differential carrier lifetime, deep level transient spectroscopy measurements.
Analysis of the reliability-limiting mechanisms in GaN-based LEDs and lasers: characterization of defects, analysis of the failure modes, definition of models for the degradation processes, failure analysis; study of the effects of EOS and ESD at device and system level.

Submitted by zennaro2 on Fri, 10/02/2015 - 10:45

Characterization of OTFT and BioSensors by means of standard DC, AC and transient measurements, such as EIS (Electrochemical Impendance Spectroscopy) and DLTS (Deep level transient spectroscopy).
Modeling of OTFT and BioSensors by means of simulations, physical models, circuital models, impendance models.
Reliability study of OTFT by means of accelerated electrical stress, light and UV exposure, thermal storage.

Submitted by zennaro2 on Fri, 10/02/2015 - 10:37

Characterization of GaN based transistors for RF and power applications, and of high-voltage/high current SiC devices.
Analysis of the trapping processes that limit the dynamic performance of the devices, based on current-DLTS, capacitance-DLTS, optical-DLTS, backgating investigation; development of physical models of the charge-trapping processes; study of the interface traps by C-V, Dit and Vth transient measurements; analysis of issues related to devices with Schottky, insulated and p-type gate.