Optoelectronic devices

Research activities:

  • Study of the physical mechanisms that limit the internal quantum efficiency of GaN-based LEDs and laser diodes emitting in the visible, NUV and DUV spectral region, based on combined EL, differential carrier lifetime, deep level transient spectroscopy measurements.
  • Analysis of the reliability-limiting mechanisms in GaN-based LEDs and lasers: characterization of defects, analysis of the failure modes, definition of models for the degradation processes, failure analysis; study of the effects of EOS and ESD at device and system level.
  • System level analysis of GaN LEDs and lasers, aimed at maximizing of efficiency and reliability: thermal characterization (IR mapping, true estimation of junction temperature), optical simulation, impact of driving conditions on system reliability, material issues related to high-power lightning systems (phosphors, package, lenses).

People: Matteo Meneghini (contact person), Enrico Zanoni, Gaudenzio Meneghesso.

  • Electro-optical characterization of the performance of the devices by DC and transient measurements (Impendance spectroscopy and DLTS), the analysis of the effect of temperature on the characteristics of the devices, the impendance analysis.
  • Modeling and simulation of the devices.
  • Reliability study by means of DC and pulsed stress tests, thermal stress and UV exposure.

Homepage: http://most.dei.unipd.it

People: Andrea Cester (contact person), Gaudenzio Meneghesso